HP8KC6TB1

HP8KC6TB1 Rohm Semiconductor


datasheet?p=HP8KC6&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Hersteller: Rohm Semiconductor
Description: 60V 23A, DUAL NCH+NCH, HSOP8, PO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 21W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 23A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V
Rds On (Max) @ Id, Vgs: 27mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 2500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.1 EUR
Mindestbestellmenge: 2500
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Technische Details HP8KC6TB1 Rohm Semiconductor

Description: 60V 23A, DUAL NCH+NCH, HSOP8, PO, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3W (Ta), 21W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 23A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V, Rds On (Max) @ Id, Vgs: 27mOhm @ 8.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V, FET Feature: Standard, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSOP.

Weitere Produktangebote HP8KC6TB1 nach Preis ab 1.18 EUR bis 3.61 EUR

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Preis ohne MwSt
HP8KC6TB1 HP8KC6TB1 Hersteller : Rohm Semiconductor datasheet?p=HP8KC6&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 60V 23A, DUAL NCH+NCH, HSOP8, PO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 21W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 23A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V
Rds On (Max) @ Id, Vgs: 27mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.39 EUR
10+ 2.15 EUR
25+ 2.03 EUR
100+ 1.73 EUR
250+ 1.62 EUR
500+ 1.42 EUR
1000+ 1.18 EUR
Mindestbestellmenge: 8
HP8KC6TB1 HP8KC6TB1 Hersteller : ROHM Semiconductor datasheet?p=HP8KC6&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key MOSFET 60V 23A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KC6 is a low on-resistance MOSFET ideal for switching applications.
auf Bestellung 5000 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
15+3.61 EUR
18+ 2.99 EUR
100+ 2.38 EUR
250+ 2.2 EUR
500+ 1.99 EUR
1000+ 1.91 EUR
2500+ 1.62 EUR
Mindestbestellmenge: 15
HP8KC6TB1 Hersteller : Rohm Semiconductor hp8kc6tb1-e.pdf Trans MOSFET N-CH 60V 8.5A 8-Pin HSOP EP T/R
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
97+1.63 EUR
Mindestbestellmenge: 97