HP8KC6TB1 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: 60V 23A, DUAL NCH+NCH, HSOP8, PO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 21W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 23A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V
Rds On (Max) @ Id, Vgs: 27mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Description: 60V 23A, DUAL NCH+NCH, HSOP8, PO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 21W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 23A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V
Rds On (Max) @ Id, Vgs: 27mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.1 EUR |
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Technische Details HP8KC6TB1 Rohm Semiconductor
Description: 60V 23A, DUAL NCH+NCH, HSOP8, PO, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3W (Ta), 21W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 23A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V, Rds On (Max) @ Id, Vgs: 27mOhm @ 8.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V, FET Feature: Standard, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSOP.
Weitere Produktangebote HP8KC6TB1 nach Preis ab 1.18 EUR bis 3.61 EUR
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HP8KC6TB1 | Hersteller : Rohm Semiconductor |
Description: 60V 23A, DUAL NCH+NCH, HSOP8, PO Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 21W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 23A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V Rds On (Max) @ Id, Vgs: 27mOhm @ 8.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8KC6TB1 | Hersteller : ROHM Semiconductor | MOSFET 60V 23A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KC6 is a low on-resistance MOSFET ideal for switching applications. |
auf Bestellung 5000 Stücke: Lieferzeit 14-28 Tag (e) |
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HP8KC6TB1 | Hersteller : Rohm Semiconductor | Trans MOSFET N-CH 60V 8.5A 8-Pin HSOP EP T/R |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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