HP8KE5TB1 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: 100V 8.5A, DUAL NCH+NCH, HSOP8,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 20W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 8.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
Rds On (Max) @ Id, Vgs: 193mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Description: 100V 8.5A, DUAL NCH+NCH, HSOP8,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 20W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 8.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
Rds On (Max) @ Id, Vgs: 193mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.88 EUR |
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Technische Details HP8KE5TB1 Rohm Semiconductor
Description: 100V 8.5A, DUAL NCH+NCH, HSOP8,, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3W (Ta), 20W (Tc), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 8.5A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V, Rds On (Max) @ Id, Vgs: 193mOhm @ 3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSOP.
Weitere Produktangebote HP8KE5TB1 nach Preis ab 0.67 EUR bis 3.15 EUR
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HP8KE5TB1 | Hersteller : Rohm Semiconductor |
Description: 100V 8.5A, DUAL NCH+NCH, HSOP8, Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 20W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 8.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V Rds On (Max) @ Id, Vgs: 193mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| HP8KE5TB1 | Hersteller : Rohm Semiconductor |
 Trans MOSFET N-CH 100V 3A 8-Pin HSOP EP |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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| HP8KE5TB1 | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 100V 3A 8-Pin HSOP EP |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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HP8KE5TB1 | Hersteller : ROHM Semiconductor | MOSFETs HSOP8 100V 8.5A N CHAN MOS |
Produkt ist nicht verfügbar |