| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.49 EUR |
| 10+ | 3.56 EUR |
| 100+ | 2.48 EUR |
| 500+ | 2.07 EUR |
| 1000+ | 1.93 EUR |
| 2500+ | 1.75 EUR |
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Technische Details HP8M51TB1 ROHM Semiconductor
Description: MOSFET N/P-CH 100V 4.5A 8HSOP, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Drain to Source Voltage (Vdss): 100V, Power - Max: 3W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Supplier Device Package: 8-HSOP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 26.2nC @ 10V, Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 10V, 290mOhm @ 4.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V, 1430pF @ 50V.
Weitere Produktangebote HP8M51TB1 nach Preis ab 2.14 EUR bis 5.57 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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HP8M51TB1 | Rohm Semiconductor |
 Description: MOSFET N/P-CH 100V 4.5A 8HSOPSupplier Device Package: 8-HSOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 26.2nC @ 10V Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 10V, 290mOhm @ 4.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V, 1430pF @ 50V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drain to Source Voltage (Vdss): 100V Power - Max: 3W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 667 Stücke: Lieferzeit 10-14 Tag (e) |
|
| HP8M51TB1 |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 4.5A 8HSOP
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 26.2nC @ 10V
Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 10V, 290mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V, 1430pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 3W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 100V 4.5A 8HSOP
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 26.2nC @ 10V
Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 10V, 290mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V, 1430pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 3W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 667 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.57 EUR |
| 10+ | 3.82 EUR |
| 100+ | 2.64 EUR |
| 500+ | 2.14 EUR |