HP8M51TB1 Rohm Semiconductor
auf Bestellung 1465 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 58+ | 2.64 EUR |
| 100+ | 2.45 EUR |
| 250+ | 2.29 EUR |
| 500+ | 2.14 EUR |
| 1000+ | 2 EUR |
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Technische Details HP8M51TB1 Rohm Semiconductor
Description: MOSFET N/P-CH 100V 4.5A 8HSOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3W (Ta), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V, 1430pF @ 50V, Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 10V, 290mOhm @ 4.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 26.2nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSOP.
Weitere Produktangebote HP8M51TB1 nach Preis ab 1.7 EUR bis 5.51 EUR
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HP8M51TB1 | Hersteller : Rohm Semiconductor |
 Description: MOSFET N/P-CH 100V 4.5A 8HSOPPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V, 1430pF @ 50V Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 10V, 290mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 26.2nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP |
auf Bestellung 2458 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8M51TB1 | Hersteller : ROHM Semiconductor |
MOSFET HP8M51TB1 is low on-resistance and small surface mount package MOSFET. It is suitable for switching application. |
auf Bestellung 973 Stücke: Lieferzeit 14-28 Tag (e) |
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HP8M51TB1 | Hersteller : Rohm Semiconductor |
Trans MOSFET N/P-CH 100V 4.5A 8-Pin HSOP EP T/R |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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| HP8M51TB1 | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 4.5A; Idm: 18A; 7W Kind of package: reel; tape Mounting: SMD Pulsed drain current: 18A Power dissipation: 7W Gate charge: 15/26.2nC Polarisation: unipolar Drain current: 4.5A Kind of channel: enhanced Drain-source voltage: 100/-100V Type of transistor: N/P-MOSFET Case: HSOP8 On-state resistance: 180/320mΩ Gate-source voltage: ±20V Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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HP8M51TB1 | Hersteller : Rohm Semiconductor |
Description: MOSFET N/P-CH 100V 4.5A 8HSOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V, 1430pF @ 50V Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 10V, 290mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 26.2nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP |
Produkt ist nicht verfügbar |
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| HP8M51TB1 | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 4.5A; Idm: 18A; 7W Kind of package: reel; tape Mounting: SMD Pulsed drain current: 18A Power dissipation: 7W Gate charge: 15/26.2nC Polarisation: unipolar Drain current: 4.5A Kind of channel: enhanced Drain-source voltage: 100/-100V Type of transistor: N/P-MOSFET Case: HSOP8 On-state resistance: 180/320mΩ Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |