HP8M51TB1 Rohm Semiconductor

Description: MOSFET N/P-CH 100V 4.5A 8HSOP, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Drain to Source Voltage (Vdss): 100V, Power - Max: 3W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Supplier Device Package: 8-HSOP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 26.2nC @ 10V, Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 10V, 290mOhm @ 4.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V, 1430pF @ 50V.