HP8MA2TB1 Rohm Semiconductor
auf Bestellung 1854 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 129+ | 1.21 EUR |
| 250+ | 1.12 EUR |
| 500+ | 1.04 EUR |
| 1000+ | 0.97 EUR |
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Technische Details HP8MA2TB1 Rohm Semiconductor
Description: MOSFET N/P-CH 30V 18A/15A 8HSOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 15A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 1250pF @ 15V, Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSOP.
Weitere Produktangebote HP8MA2TB1 nach Preis ab 1.36 EUR bis 4.29 EUR
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HP8MA2TB1 | Hersteller : Rohm Semiconductor |
 Description: MOSFET N/P-CH 30V 18A/15A 8HSOPPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 15A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 1250pF @ 15V Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP |
auf Bestellung 2304 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8MA2TB1 | Hersteller : ROHM Semiconductor |
MOSFET HP8MA2 is low on-resistance and small surface mount package MOSFET for switching application. |
auf Bestellung 1986 Stücke: Lieferzeit 14-28 Tag (e) |
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HP8MA2TB1 | Hersteller : Rohm Semiconductor |
Trans MOSFET N/P-CH 30V 18A/15A 8-Pin HSOP EP T/R |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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| HP8MA2TB1 | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 18/15A; Idm: 48A; 7W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 18/15A Pulsed drain current: 48A Power dissipation: 7W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 16.4/29mΩ Mounting: SMD Gate charge: 22/25nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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HP8MA2TB1 | Hersteller : Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 18A/15A 8HSOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 15A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 1250pF @ 15V Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP |
Produkt ist nicht verfügbar |
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| HP8MA2TB1 | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 18/15A; Idm: 48A; 7W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 18/15A Pulsed drain current: 48A Power dissipation: 7W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 16.4/29mΩ Mounting: SMD Gate charge: 22/25nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |