HP8MB5TB1 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: 40V 16.5A, DUAL NCH+PCH, HSOP8,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 20W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 16.5A (Tc), 7A (Ta), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V
Rds On (Max) @ Id, Vgs: 46mOhm @ 6A, 10V, 44mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.94 EUR |
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Technische Details HP8MB5TB1 Rohm Semiconductor
Description: 40V 16.5A, DUAL NCH+PCH, HSOP8,, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3W (Ta), 20W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 16.5A (Tc), 7A (Ta), 18A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V, Rds On (Max) @ Id, Vgs: 46mOhm @ 6A, 10V, 44mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V, FET Feature: Standard, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSOP.
Weitere Produktangebote HP8MB5TB1 nach Preis ab 0.89 EUR bis 3.3 EUR
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HP8MB5TB1 | Hersteller : Rohm Semiconductor |
Description: 40V 16.5A, DUAL NCH+PCH, HSOP8, Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 20W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 16.5A (Tc), 7A (Ta), 18A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V Rds On (Max) @ Id, Vgs: 46mOhm @ 6A, 10V, 44mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8MB5TB1 | Hersteller : ROHM Semiconductor |
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auf Bestellung 5000 Stücke: Lieferzeit 14-28 Tag (e) |
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