Weitere Produktangebote HP8S36TB nach Preis ab 3.13 EUR bis 3.13 EUR
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HP8S36TB | Hersteller : Rohm Semiconductor |
 Trans MOSFET N-CH 30V 27A/80A 8-Pin HSOP EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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HP8S36TB | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 30V 27A/80A 8-Pin HSOP EP T/R |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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HP8S36TB | Hersteller : Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 27A/80A 8HSOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 29W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A, 80A Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 15V Rds On (Max) @ Id, Vgs: 2.4mOhm @ 32A, 10V Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Part Status: Not For New Designs |
Produkt ist nicht verfügbar |
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HP8S36TB | Hersteller : Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 27A/80A 8HSOP Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 29W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A, 80A Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 15V Rds On (Max) @ Id, Vgs: 2.4mOhm @ 32A, 10V Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Part Status: Not For New Designs |
Produkt ist nicht verfügbar |
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HP8S36TB | Hersteller : ROHM Semiconductor |
MOSFETs 30V Nch+Nch Si MOSFET |
Produkt ist nicht verfügbar |