HS1F SURGE
Hersteller: SURGEDescription: DIODE GEN PURP 300V 1A DO214AC
Packaging: Bag
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 77+ | 0.23 EUR |
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Technische Details HS1F SURGE
Description: DIODE GEN PURP 300V 1A DO214AC, Packaging: Bag, Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 20pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-214AC (SMA), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 300 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 300 V.
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HS1F | Hersteller : YANGJIE TECHNOLOGY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 300V; 1A; 50ns; SMA; Ufmax: 1.3V; Ifsm: 30A Kind of package: reel; tape Reverse recovery time: 50ns Max. forward voltage: 1.3V Max. forward impulse current: 30A Load current: 1A Max. off-state voltage: 300V Case: SMA Type of diode: rectifying Semiconductor structure: single diode Mounting: SMD Features of semiconductor devices: glass passivated; superfast switching |
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