| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.38 EUR |
| 10+ | 1.23 EUR |
| 100+ | 0.94 EUR |
| 500+ | 0.74 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details HS8K11TB ROHM Semiconductor
Description: MOSFET 2N-CH 30V 7A/11A HSML, Part Status: Active, Supplier Device Package: HSML3030L10, Vgs(th) (Max) @ Id: 2.5V @ 1mA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V, Rds On (Max) @ Id, Vgs: 17.9mOhm @ 7A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 7A, 11A, Drain to Source Voltage (Vdss): 30V, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-UDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote HS8K11TB nach Preis ab 0.8 EUR bis 1.96 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
HS8K11TB | Rohm Semiconductor |
 Description: MOSFET 2N-CH 30V 7A/11A HSMLOperating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-UDFN Exposed Pad Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: HSML3030L10 Vgs(th) (Max) @ Id: 2.5V @ 1mA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V Rds On (Max) @ Id, Vgs: 17.9mOhm @ 7A, 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V Current - Continuous Drain (Id) @ 25°C: 7A, 11A Drain to Source Voltage (Vdss): 30V Power - Max: 2W Technology: MOSFET (Metal Oxide) |
auf Bestellung 186 Stücke: Lieferzeit 10-14 Tag (e) |
|
| HS8K11TB |
|
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 7A/11A HSML
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: HSML3030L10
Vgs(th) (Max) @ Id: 2.5V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V
Rds On (Max) @ Id, Vgs: 17.9mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7A, 11A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Description: MOSFET 2N-CH 30V 7A/11A HSML
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: HSML3030L10
Vgs(th) (Max) @ Id: 2.5V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V
Rds On (Max) @ Id, Vgs: 17.9mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7A, 11A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
auf Bestellung 186 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 1.96 EUR |
| 18+ | 1.23 EUR |
| 100+ | 0.8 EUR |