HS8K11TB Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 228+ | 0.79 EUR |
| 250+ | 0.74 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
228 Stücke
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Technische Details HS8K11TB Rohm Semiconductor
Description: MOSFET 2N-CH 30V 7A/11A HSML, Packaging: Tape & Reel (TR), Package / Case: 8-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 7A, 11A, Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, Rds On (Max) @ Id, Vgs: 17.9mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: HSML3030L10, Part Status: Active.
Weitere Produktangebote HS8K11TB nach Preis ab 0.8 EUR bis 1.96 EUR
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HS8K11TB | Rohm Semiconductor |
 Trans MOSFET N-CH 30V 7A/11A 8-Pin HSML EP T/R |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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HS8K11TB | Rohm Semiconductor |
Trans MOSFET N-CH 30V 7A/11A 8-Pin HSML EP T/R |
auf Bestellung 476 Stücke: Lieferzeit 14-21 Tag (e) |
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HS8K11TB | Rohm Semiconductor |
Trans MOSFET N-CH 30V 7A/11A 8-Pin HSML EP T/R |
auf Bestellung 476 Stücke: Lieferzeit 14-21 Tag (e) |
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HS8K11TB | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 7A/11A HSML Packaging: Cut Tape (CT) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A, 11A Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V Rds On (Max) @ Id, Vgs: 17.9mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HSML3030L10 Part Status: Active |
auf Bestellung 186 Stücke: Lieferzeit 10-14 Tag (e) |
|
| HS8K11TB |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 30V 7A/11A 8-Pin HSML EP T/R
Trans MOSFET N-CH 30V 7A/11A 8-Pin HSML EP T/R
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 221+ | 0.81 EUR |
| HS8K11TB |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 30V 7A/11A 8-Pin HSML EP T/R
Trans MOSFET N-CH 30V 7A/11A 8-Pin HSML EP T/R
auf Bestellung 476 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 122+ | 1.46 EUR |
| HS8K11TB |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 30V 7A/11A 8-Pin HSML EP T/R
Trans MOSFET N-CH 30V 7A/11A 8-Pin HSML EP T/R
auf Bestellung 476 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 122+ | 1.46 EUR |
| HS8K11TB |
|
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 7A/11A HSML
Packaging: Cut Tape (CT)
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 11A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Rds On (Max) @ Id, Vgs: 17.9mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HSML3030L10
Part Status: Active
Description: MOSFET 2N-CH 30V 7A/11A HSML
Packaging: Cut Tape (CT)
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 11A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Rds On (Max) @ Id, Vgs: 17.9mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HSML3030L10
Part Status: Active
auf Bestellung 186 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 1.96 EUR |
| 18+ | 1.23 EUR |
| 100+ | 0.8 EUR |