auf Bestellung 752 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.16 EUR |
| 10+ | 1.03 EUR |
| 100+ | 0.79 EUR |
| 500+ | 0.62 EUR |
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Technische Details HS8K11TB ROHM Semiconductor
Description: MOSFET 2N-CH 30V 7A/11A HSML, Packaging: Tape & Reel (TR), Package / Case: 8-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 7A, 11A, Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, Rds On (Max) @ Id, Vgs: 17.9mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: HSML3030L10, Part Status: Active.
Weitere Produktangebote HS8K11TB nach Preis ab 0.48 EUR bis 1.69 EUR
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HS8K11TB | Hersteller : Rohm Semiconductor |
 Description: MOSFET 2N-CH 30V 7A/11A HSMLPackaging: Cut Tape (CT) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A, 11A Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V Rds On (Max) @ Id, Vgs: 17.9mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HSML3030L10 Part Status: Active |
auf Bestellung 1306 Stücke: Lieferzeit 10-14 Tag (e) |
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| HS8K11TB | Hersteller : ROHM SEMICONDUCTOR |
HS8K11TB Multi channel transistors |
Produkt ist nicht verfügbar |
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HS8K11TB | Hersteller : Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 7A/11A HSML Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A, 11A Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V Rds On (Max) @ Id, Vgs: 17.9mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HSML3030L10 Part Status: Active |
Produkt ist nicht verfügbar |