HS8K11TB Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET 2N-CH 30V 7A/11A HSML
Packaging: Cut Tape (CT)
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 11A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Rds On (Max) @ Id, Vgs: 17.9mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HSML3030L10
Part Status: Active
auf Bestellung 1370 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 18+ | 1.46 EUR |
| 21+ | 1.27 EUR |
| 100+ | 0.88 EUR |
| 500+ | 0.73 EUR |
| 1000+ | 0.62 EUR |
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Technische Details HS8K11TB Rohm Semiconductor
Description: MOSFET 2N-CH 30V 7A/11A HSML, Packaging: Tape & Reel (TR), Package / Case: 8-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 7A, 11A, Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, Rds On (Max) @ Id, Vgs: 17.9mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: HSML3030L10, Part Status: Active.
Weitere Produktangebote HS8K11TB nach Preis ab 0.92 EUR bis 1.72 EUR
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HS8K11TB | Hersteller : ROHM Semiconductor |
MOSFET 30V Nch+Nch Power MOSFET |
auf Bestellung 752 Stücke: Lieferzeit 14-28 Tag (e) |
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| HS8K11TB | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 7/11A; Idm: 28÷44A; 2W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 7/11A Pulsed drain current: 28...44A Power dissipation: 2W Case: uDFN8 Gate-source voltage: ±20V On-state resistance: 29.1/15.4mΩ Mounting: SMD Gate charge: 11.1/20.2C Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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HS8K11TB | Hersteller : Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 7A/11A HSML Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A, 11A Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V Rds On (Max) @ Id, Vgs: 17.9mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HSML3030L10 Part Status: Active |
Produkt ist nicht verfügbar |
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| HS8K11TB | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 7/11A; Idm: 28÷44A; 2W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 7/11A Pulsed drain current: 28...44A Power dissipation: 2W Case: uDFN8 Gate-source voltage: ±20V On-state resistance: 29.1/15.4mΩ Mounting: SMD Gate charge: 11.1/20.2C Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |