HS8K1TB Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 10A HSML3030L10
Packaging: Tape & Reel (TR)
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 11A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 348pF @ 15V, 429pF @ 15V
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 10A, 10V, 11.8mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V, 7.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HSML3030L10
Part Status: Active
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Technische Details HS8K1TB Rohm Semiconductor
Description: MOSFET 2N-CH 30V 10A HSML3030L10, Packaging: Tape & Reel (TR), Package / Case: 8-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 11A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 348pF @ 15V, 429pF @ 15V, Rds On (Max) @ Id, Vgs: 14.6mOhm @ 10A, 10V, 11.8mOhm @ 11A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V, 7.4nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: HSML3030L10, Part Status: Active.
Weitere Produktangebote HS8K1TB nach Preis ab 0.57 EUR bis 2.49 EUR
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HS8K1TB | ROHM Semiconductor |
MOSFETs 30V Nch+Nch Power MOSFET |
auf Bestellung 4224 Stücke: Lieferzeit 10-14 Tag (e) |
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HS8K1TB | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 10A HSML3030L10 Part Status: Active Supplier Device Package: HSML3030L10 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V, 7.4nC @ 10V Rds On (Max) @ Id, Vgs: 14.6mOhm @ 10A, 10V, 11.8mOhm @ 11A, 10V Input Capacitance (Ciss) (Max) @ Vds: 348pF @ 15V, 429pF @ 15V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 11A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-UDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 9261 Stücke: Lieferzeit 10-14 Tag (e) |
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| HS8K1TB |
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Hersteller: ROHM Semiconductor
MOSFETs 30V Nch+Nch Power MOSFET
MOSFETs 30V Nch+Nch Power MOSFET
auf Bestellung 4224 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.28 EUR |
| 10+ | 1.44 EUR |
| 100+ | 0.95 EUR |
| 500+ | 0.74 EUR |
| 1000+ | 0.67 EUR |
| 3000+ | 0.58 EUR |
| 6000+ | 0.57 EUR |
| HS8K1TB |
|
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 10A HSML3030L10
Part Status: Active
Supplier Device Package: HSML3030L10
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V, 7.4nC @ 10V
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 10A, 10V, 11.8mOhm @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 348pF @ 15V, 429pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 11A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 10A HSML3030L10
Part Status: Active
Supplier Device Package: HSML3030L10
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V, 7.4nC @ 10V
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 10A, 10V, 11.8mOhm @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 348pF @ 15V, 429pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 11A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-UDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 9261 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.49 EUR |
| 14+ | 1.57 EUR |
| 100+ | 1.04 EUR |
| 500+ | 0.81 EUR |
| 1000+ | 0.73 EUR |