HS8K1TB

HS8K1TB Rohm Semiconductor


datasheet?p=HS8K1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 10A HSML3030L10
Packaging: Tape & Reel (TR)
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 11A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 348pF @ 15V, 429pF @ 15V
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 10A, 10V, 11.8mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V, 7.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HSML3030L10
Part Status: Active
auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.47 EUR
Mindestbestellmenge: 3000
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Technische Details HS8K1TB Rohm Semiconductor

Description: MOSFET 2N-CH 30V 10A HSML3030L10, Packaging: Tape & Reel (TR), Package / Case: 8-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 11A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 348pF @ 15V, 429pF @ 15V, Rds On (Max) @ Id, Vgs: 14.6mOhm @ 10A, 10V, 11.8mOhm @ 11A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V, 7.4nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: HSML3030L10, Part Status: Active.

Weitere Produktangebote HS8K1TB nach Preis ab 0.49 EUR bis 2.15 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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HS8K1TB HS8K1TB Hersteller : ROHM Semiconductor datasheet?p=HS8K1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFETs HSML3030L N CHAN 30V
auf Bestellung 2715 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.4 EUR
10+1.12 EUR
100+0.77 EUR
500+0.62 EUR
1000+0.57 EUR
3000+0.49 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
HS8K1TB HS8K1TB Hersteller : Rohm Semiconductor datasheet?p=HS8K1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 30V 10A HSML3030L10
Packaging: Cut Tape (CT)
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 11A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 348pF @ 15V, 429pF @ 15V
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 10A, 10V, 11.8mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V, 7.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HSML3030L10
Part Status: Active
auf Bestellung 9651 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.15 EUR
14+1.35 EUR
100+0.89 EUR
500+0.69 EUR
1000+0.63 EUR
Mindestbestellmenge: 9
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HS8K1TB Hersteller : ROHM SEMICONDUCTOR datasheet?p=HS8K1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key HS8K1TB Multi channel transistors
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