HSG1002VE-TL-E

HSG1002VE-TL-E Renesas Electronics Corporation


RNCCS00938-1.pdf?t.download=true&u=5oefqw
Hersteller: Renesas Electronics Corporation
Description: RF 0.035A C BAND GERMANIUM NPN
Packaging: Bulk
Part Status: Obsolete
Supplier Device Package: 4-MFPAK
Noise Figure (dB Typ @ f): 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
Frequency - Transition: 38GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 2V
Voltage - Collector Emitter Breakdown (Max): 3.5V
Current - Collector (Ic) (Max): 35mA
Power - Max: 200mW
Gain: 8dB ~ 19.5dB
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
auf Bestellung 510000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
706+0.72 EUR
Mindestbestellmenge: 706
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Technische Details HSG1002VE-TL-E Renesas Electronics Corporation

Description: RF 0.035A C BAND GERMANIUM NPN, Packaging: Bulk, Part Status: Obsolete, Supplier Device Package: 4-MFPAK, Noise Figure (dB Typ @ f): 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz, Frequency - Transition: 38GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 2V, Voltage - Collector Emitter Breakdown (Max): 3.5V, Current - Collector (Ic) (Max): 35mA, Power - Max: 200mW, Gain: 8dB ~ 19.5dB, Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: 4-SMD, Gull Wing.