Technische Details HUF75321D3ST ON Semiconductor
Description: MOSFET N-CH 55V 20A TO252AA, Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 20 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 93W (Tc), Rds On (Max) @ Id, Vgs: 36mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote HUF75321D3ST nach Preis ab 0.48 EUR bis 2.83 EUR
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HUF75321D3ST | ON Semiconductor |
Trans MOSFET N-CH Si 55V 20A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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HUF75321D3ST | ON Semiconductor |
Trans MOSFET N-CH Si 55V 20A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2250 Stücke: Lieferzeit 14-21 Tag (e) |
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HUF75321D3ST | ON Semiconductor |
Trans MOSFET N-CH Si 55V 20A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 112500 Stücke: Lieferzeit 14-21 Tag (e) |
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HUF75321D3ST | ON Semiconductor |
Trans MOSFET N-CH Si 55V 20A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2250 Stücke: Lieferzeit 14-21 Tag (e) |
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HUF75321D3ST | onsemi / Fairchild |
MOSFETs 20a 55V N-Channel UltraFET |
auf Bestellung 495 Stücke: Lieferzeit 10-14 Tag (e) |
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HUF75321D3ST | onsemi |
MOSFETs 20a 55V N-Channel UltraFET |
auf Bestellung 111 Stücke: Lieferzeit 10-14 Tag (e) |
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HUF75321D3ST | onsemi |
Description: MOSFET N-CH 55V 20A TO252AAPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 20A, 10V Power Dissipation (Max): 93W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V |
auf Bestellung 1971 Stücke: Lieferzeit 10-14 Tag (e) |
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| HUF75321D3ST |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 55V 20A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH Si 55V 20A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.6 EUR |
| HUF75321D3ST |
![]() |
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 55V 20A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH Si 55V 20A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2250 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 285+ | 0.62 EUR |
| HUF75321D3ST |
![]() |
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 55V 20A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH Si 55V 20A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 112500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 228+ | 0.77 EUR |
| 253+ | 0.67 EUR |
| 286+ | 0.57 EUR |
| 500+ | 0.5 EUR |
| 2500+ | 0.48 EUR |
| HUF75321D3ST |
![]() |
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 55V 20A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH Si 55V 20A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2250 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 214+ | 0.82 EUR |
| 239+ | 0.71 EUR |
| 241+ | 0.68 EUR |
| 273+ | 0.57 EUR |
| 276+ | 0.55 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.49 EUR |
| HUF75321D3ST |
![]() |
Hersteller: onsemi / Fairchild
MOSFETs 20a 55V N-Channel UltraFET
MOSFETs 20a 55V N-Channel UltraFET
auf Bestellung 495 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.99 EUR |
| 10+ | 0.98 EUR |
| 100+ | 0.8 EUR |
| 500+ | 0.76 EUR |
| 1000+ | 0.73 EUR |
| 2500+ | 0.69 EUR |
| 5000+ | 0.64 EUR |
| HUF75321D3ST |
![]() |
Hersteller: onsemi
MOSFETs 20a 55V N-Channel UltraFET
MOSFETs 20a 55V N-Channel UltraFET
auf Bestellung 111 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.83 EUR |
| 10+ | 1.78 EUR |
| 100+ | 1.19 EUR |
| 500+ | 0.93 EUR |
| 1000+ | 0.84 EUR |
| 2500+ | 0.7 EUR |
| HUF75321D3ST |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 55V 20A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 20A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
Description: MOSFET N-CH 55V 20A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 20A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
auf Bestellung 1971 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.83 EUR |
| 12+ | 1.78 EUR |
| 100+ | 1.18 EUR |
| 500+ | 0.93 EUR |
| 1000+ | 0.84 EUR |



