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HUF75321D3ST

HUF75321D3ST onsemi

ONSM-S-A0003591046-1.pdf?t.download=true&u=5oefqw Hersteller: onsemi
Description: MOSFET N-CH 55V 20A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 20A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
auf Bestellung 8200 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+0.91 EUR
5000+ 0.86 EUR
Mindestbestellmenge: 2500
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Technische Details HUF75321D3ST onsemi

Description: MOSFET N-CH 55V 20A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 36mOhm @ 20A, 10V, Power Dissipation (Max): 93W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V.

Weitere Produktangebote HUF75321D3ST nach Preis ab 0.95 EUR bis 2.18 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
HUF75321D3ST HUF75321D3ST Hersteller : onsemi / Fairchild HUF75321D3ST_D-2314314.pdf MOSFET 20a 55V N-Channel UltraFET
auf Bestellung 2544 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
26+2.01 EUR
32+ 1.65 EUR
100+ 1.32 EUR
500+ 1.14 EUR
1000+ 0.95 EUR
Mindestbestellmenge: 26
HUF75321D3ST HUF75321D3ST Hersteller : onsemi ONSM-S-A0003591046-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 20A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 20A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
auf Bestellung 10440 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
12+2.18 EUR
15+ 1.79 EUR
100+ 1.4 EUR
500+ 1.18 EUR
1000+ 0.96 EUR
Mindestbestellmenge: 12
HUF75321D3ST HUF75321D3ST Hersteller : ON Semiconductor 3668728839089232huf75321d3st.pdf Trans MOSFET N-CH Si 55V 20A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 40000 Stücke:
Lieferzeit 14-21 Tag (e)