| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.62 EUR |
| 10+ | 1.77 EUR |
| 100+ | 1.26 EUR |
| 500+ | 1.09 EUR |
| 1000+ | 0.99 EUR |
| 2500+ | 0.92 EUR |
| 5000+ | 0.83 EUR |
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Technische Details HUF75329D3ST onsemi / Fairchild
Description: MOSFET N-CH 55V 20A TO252AA, Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 20 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 128W (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote HUF75329D3ST nach Preis ab 0.84 EUR bis 3.19 EUR
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HUF75329D3ST | onsemi |
 MOSFETs 20a 55V N-Channel UltraFET |
auf Bestellung 3364 Stücke: Lieferzeit 10-14 Tag (e) |
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HUF75329D3ST | onsemi |
Description: MOSFET N-CH 55V 20A TO252AA Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 20 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 128W (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 1049 Stücke: Lieferzeit 10-14 Tag (e) |
|
| HUF75329D3ST |
|
Hersteller: onsemi
MOSFETs 20a 55V N-Channel UltraFET
MOSFETs 20a 55V N-Channel UltraFET
auf Bestellung 3364 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.64 EUR |
| 10+ | 1.83 EUR |
| 100+ | 1.34 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 0.92 EUR |
| 2500+ | 0.84 EUR |
| HUF75329D3ST |
|
Hersteller: onsemi
Description: MOSFET N-CH 55V 20A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 128W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 55V 20A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 128W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1049 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.19 EUR |
| 11+ | 2.01 EUR |
| 100+ | 1.34 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 0.96 EUR |