HUF75332P3
Produktcode: 144977
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Weitere Produktangebote HUF75332P3 nach Preis ab 1.31 EUR bis 7.95 EUR
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HUF75332P3 | Fairchild |
Trans MOSFET N-CH Si 55V 60A (HUF75332S3ST *OBSOLETE) HUF75332P3 THUF75332p3 Anzahl je Verpackung: 50 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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HUF75332P3 | onsemi |
Description: MOSFET N-CH 55V 60A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 145W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 406 Stücke: Lieferzeit 10-14 Tag (e) |
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HUF75332P3 | onsemi / Fairchild |
MOSFETs 60a 55V 0.019 Ohm Logic Level N-Ch |
auf Bestellung 572 Stücke: Lieferzeit 10-14 Tag (e) |
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HUF75332P3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 145W; TO220AB Kind of package: tube Type of transistor: N-MOSFET Mounting: THT Case: TO220AB Technology: UltraFET® Polarisation: unipolar Gate charge: 85nC On-state resistance: 16mΩ Gate-source voltage: ±20V Drain-source voltage: 55V Drain current: 60A Power dissipation: 145W Kind of channel: enhancement |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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Hersteller: Fairchild
Trans MOSFET N-CH Si 55V 60A (HUF75332S3ST *OBSOLETE) HUF75332P3 THUF75332p3
Anzahl je Verpackung: 50 Stücke
Trans MOSFET N-CH Si 55V 60A (HUF75332S3ST *OBSOLETE) HUF75332P3 THUF75332p3
Anzahl je Verpackung: 50 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 1.8 EUR |
| HUF75332P3 |
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Hersteller: onsemi
Description: MOSFET N-CH 55V 60A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 145W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 55V 60A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 145W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 406 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 2.97 EUR |
| 10+ | 1.91 EUR |
| 100+ | 1.31 EUR |
| HUF75332P3 |
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Hersteller: onsemi / Fairchild
MOSFETs 60a 55V 0.019 Ohm Logic Level N-Ch
MOSFETs 60a 55V 0.019 Ohm Logic Level N-Ch
auf Bestellung 572 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 3.24 EUR |
| 10+ | 1.88 EUR |
| 100+ | 1.62 EUR |
| 500+ | 1.6 EUR |
| 2400+ | 1.53 EUR |
| HUF75332P3 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 145W; TO220AB
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220AB
Technology: UltraFET®
Polarisation: unipolar
Gate charge: 85nC
On-state resistance: 16mΩ
Gate-source voltage: ±20V
Drain-source voltage: 55V
Drain current: 60A
Power dissipation: 145W
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 145W; TO220AB
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220AB
Technology: UltraFET®
Polarisation: unipolar
Gate charge: 85nC
On-state resistance: 16mΩ
Gate-source voltage: ±20V
Drain-source voltage: 55V
Drain current: 60A
Power dissipation: 145W
Kind of channel: enhancement
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 7.95 EUR |