HUF75345S3ST onsemi
Hersteller: onsemiDescription: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 75A, 10V
Power Dissipation (Max): 325W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
auf Bestellung 6400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 5.28 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details HUF75345S3ST onsemi
Description: MOSFET N-CH 55V 75A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 75A, 10V, Power Dissipation (Max): 325W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V.
Weitere Produktangebote HUF75345S3ST nach Preis ab 5.49 EUR bis 10.40 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
HUF75345S3ST | Hersteller : onsemi / Fairchild |
MOSFETs 75a 55V 0.007Ohm NCh UltraFET |
auf Bestellung 1610 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
HUF75345S3ST | Hersteller : onsemi |
Description: MOSFET N-CH 55V 75A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 75A, 10V Power Dissipation (Max): 325W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V |
auf Bestellung 7210 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
| HUF75345S3ST | Hersteller : HARRIS |
1998 |
auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||
 |
HUF75345S3ST | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 55V 75A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|||||||||||
| HUF75345S3ST | Hersteller : ONSEMI |
HUF75345S3ST SMD N channel transistors |
Produkt ist nicht verfügbar |