HUF75639P3 Fairchild
Produktcode: 122687
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Lieblingsprodukt
Hersteller: Fairchild
Gehäuse: TO-220
Drain-Source-Spannung Uds, V: 100 В
Drain-Strom Idd, A: 56 А
Durchlasswiderstand Rds(on), Ohm: 25 мОм
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 2000/9,8
Montage: THT
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Weitere Produktangebote HUF75639P3 nach Preis ab 2.23 EUR bis 6.81 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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HUF75639P3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO220AB Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 56A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: THT Gate charge: 130nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 104 Stücke: Lieferzeit 14-21 Tag (e) |
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HUF75639P3 | onsemi |
Description: MOSFET N-CH 100V 56A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
auf Bestellung 406 Stücke: Lieferzeit 10-14 Tag (e) |
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HUF75639P3 | ON Semiconductor |
Trans MOSFET N-CH Si 100V 56A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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HUF75639P3 | ON Semiconductor |
Trans MOSFET N-CH Si 100V 56A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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HUF75639P3 | onsemi |
MOSFETs 56a 100V N-Ch UltraFET 0.025 Ohm |
auf Bestellung 1236 Stücke: Lieferzeit 213-217 Tag (e) |
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| HUF75639P3 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 3.47 EUR |
| 28+ | 3.15 EUR |
| 50+ | 2.23 EUR |
| HUF75639P3 |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 56A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: MOSFET N-CH 100V 56A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 406 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.95 EUR |
| 50+ | 2.98 EUR |
| 100+ | 2.69 EUR |
| HUF75639P3 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 100V 56A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH Si 100V 56A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 29+ | 6.09 EUR |
| 58+ | 2.95 EUR |
| 100+ | 2.56 EUR |
| HUF75639P3 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 100V 56A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH Si 100V 56A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 29+ | 6.09 EUR |
| 58+ | 3.01 EUR |
| 100+ | 2.65 EUR |
| HUF75639P3 |
|
Hersteller: onsemi
MOSFETs 56a 100V N-Ch UltraFET 0.025 Ohm
MOSFETs 56a 100V N-Ch UltraFET 0.025 Ohm
auf Bestellung 1236 Stücke:
Lieferzeit 213-217 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.81 EUR |
| 10+ | 4.44 EUR |
| 100+ | 3.09 EUR |