HUF75639P3 ON Semiconductor
auf Bestellung 3522 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 48+ | 2.96 EUR |
| 57+ | 2.39 EUR |
| 100+ | 1.95 EUR |
| 250+ | 1.83 EUR |
| 500+ | 1.6 EUR |
| 800+ | 1.24 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details HUF75639P3 ON Semiconductor
Description: MOSFET N-CH 100V 56A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V.
Weitere Produktangebote HUF75639P3 nach Preis ab 1.24 EUR bis 4.7 EUR
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HUF75639P3 | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH Si 100V 56A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 3522 Stücke: Lieferzeit 14-21 Tag (e) |
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HUF75639P3 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO220AB Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 56A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: THT Gate charge: 130nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 43 Stücke: Lieferzeit 7-14 Tag (e) |
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HUF75639P3 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO220AB Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 56A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: THT Gate charge: 130nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 43 Stücke: Lieferzeit 14-21 Tag (e) |
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HUF75639P3 | Hersteller : onsemi |
Description: MOSFET N-CH 100V 56A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
auf Bestellung 194 Stücke: Lieferzeit 10-14 Tag (e) |
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HUF75639P3 | Hersteller : onsemi / Fairchild |
MOSFETs 56a 100V N-Ch UltraFET 0.025 Ohm |
auf Bestellung 911 Stücke: Lieferzeit 10-14 Tag (e) |
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HUF75639P3 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 100V 56A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 1672 Stücke: Lieferzeit 14-21 Tag (e) |
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HUF75639P3 Produktcode: 122687
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Lieblingsprodukt
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Hersteller : Fairchild |
Transistoren > MOSFET N-CH Gehäuse: TO-220 Uds,V: 100 V Idd,A: 56 A Rds(on), Ohm: 25 mOhm Ciss, pF/Qg, nC: 2000/9,8 JHGF: THT |
Produkt ist nicht verfügbar
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HUF75639P3 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 100V 56A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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HUF75639P3 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 100V 56A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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HUF75639P3 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 100V 56A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |