HUF75639S3 Harris Corporation
Hersteller: Harris CorporationDescription: MOSFET N-CH 100V 56A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 5257 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 207+ | 2.37 EUR |
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Technische Details HUF75639S3 Harris Corporation
Description: MOSFET N-CH 100V 56A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-262 (I2PAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V.
Weitere Produktangebote HUF75639S3 nach Preis ab 2.02 EUR bis 5.97 EUR
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HUF75639S3 | Hersteller : ON Semiconductor |
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auf Bestellung 2350 Stücke: Lieferzeit 14-21 Tag (e) |
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HUF75639S3 | Hersteller : onsemi / Fairchild |
MOSFETs TO-262 |
auf Bestellung 952 Stücke: Lieferzeit 10-14 Tag (e) |
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HUF75639S3 | Hersteller : onsemi |
Description: MOSFET N-CH 100V 56A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 (I2PAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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| HUF75639S3 | Hersteller : FAIRCHILD |
Trans MOSFET N-CH Si 100V 56A 3-Pin(3+Tab) TO-262 Rail |
auf Bestellung 756 Stücke: Lieferzeit 14-21 Tag (e) |
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| HUF75639S3 | Hersteller : FAIRCHILD |
Trans MOSFET N-CH Si 100V 56A 3-Pin(3+Tab) TO-262 Rail |
auf Bestellung 2700 Stücke: Lieferzeit 14-21 Tag (e) |
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| HUF75639S3 | Hersteller : FAIRCHILD |
Trans MOSFET N-CH Si 100V 56A 3-Pin(3+Tab) TO-262 Rail |
auf Bestellung 740 Stücke: Lieferzeit 14-21 Tag (e) |
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| HUF75639S3 | Hersteller : FAIRCHILD |
Trans MOSFET N-CH Si 100V 56A 3-Pin(3+Tab) TO-262 Rail |
auf Bestellung 877 Stücke: Lieferzeit 14-21 Tag (e) |
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| HUF75639S3 | Hersteller : ONSEMI |
Description: ONSEMI - HUF75639S3 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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HUF75639S3 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 100V 56A 3-Pin(3+Tab) I2PAK Tube |
Produkt ist nicht verfügbar |
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HUF75639S3 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 100V 56A 3-Pin(3+Tab) I2PAK Tube |
Produkt ist nicht verfügbar |
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| HUF75639S3 | Hersteller : ONSEMI |
HUF75639S3 THT N channel transistors |
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