HUF76407D3ST onsemi
Hersteller: onsemiDescription: MOSFET N-CH 60V 12A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 92mOhm @ 13A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.72 EUR |
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Technische Details HUF76407D3ST onsemi
Description: MOSFET N-CH 60V 12A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 92mOhm @ 13A, 10V, Power Dissipation (Max): 38W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V.
Weitere Produktangebote HUF76407D3ST nach Preis ab 0.96 EUR bis 2.03 EUR
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HUF76407D3ST | Hersteller : onsemi |
Description: MOSFET N-CH 60V 12A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 92mOhm @ 13A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
auf Bestellung 4976 Stücke: Lieferzeit 10-14 Tag (e) |
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HUF76407D3ST | Hersteller : onsemi / Fairchild |
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auf Bestellung 4359 Stücke: Lieferzeit 14-28 Tag (e) |
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HUF76407D3ST | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 12A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| HUF76407D3ST | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6A; 38W; DPAK Mounting: SMD Type of transistor: N-MOSFET Power dissipation: 38W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±16V Case: DPAK Drain-source voltage: 60V Drain current: 6A On-state resistance: 92mΩ Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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HUF76407D3ST | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 12A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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HUF76407D3ST | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 12A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| HUF76407D3ST | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6A; 38W; DPAK Mounting: SMD Type of transistor: N-MOSFET Power dissipation: 38W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±16V Case: DPAK Drain-source voltage: 60V Drain current: 6A On-state resistance: 92mΩ |
Produkt ist nicht verfügbar |