HUF76639S3ST ON Semiconductor
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 1.34 EUR |
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Technische Details HUF76639S3ST ON Semiconductor
Description: MOSFET N-CH 100V 51A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 51A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V, Power Dissipation (Max): 180W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V.
Weitere Produktangebote HUF76639S3ST nach Preis ab 1.41 EUR bis 2.48 EUR
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HUF76639S3ST | Hersteller : onsemi |
 Description: MOSFET N-CH 100V 51A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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HUF76639S3ST | Hersteller : onsemi / Fairchild |
MOSFETs 50A 100V 0.026 Ohm Logic Level N-Ch |
auf Bestellung 883 Stücke: Lieferzeit 10-14 Tag (e) |
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HUF76639S3ST | Hersteller : onsemi |
Description: MOSFET N-CH 100V 51A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V |
auf Bestellung 2032 Stücke: Lieferzeit 10-14 Tag (e) |
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HUF76639S3ST Produktcode: 176379
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Lieblingsprodukt
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Transistoren > MOSFET N-CH |
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HUF76639S3ST | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 51A 3-Pin(2+Tab) D2PAK T/R |
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HUF76639S3ST | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 51A 3-Pin(2+Tab) D2PAK T/R |
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| HUF76639S3ST | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 180W; TO263AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Power dissipation: 180W Case: TO263AB Gate-source voltage: ±16V On-state resistance: 26mΩ Mounting: SMD Gate charge: 71nC Kind of channel: enhancement Anzahl je Verpackung: 800 Stücke |
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| HUF76639S3ST | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 180W; TO263AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Power dissipation: 180W Case: TO263AB Gate-source voltage: ±16V On-state resistance: 26mΩ Mounting: SMD Gate charge: 71nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |