IAUA170N10S5N031AUMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 5.53 EUR |
| 10+ | 3.89 EUR |
| 100+ | 2.8 EUR |
| 500+ | 2.41 EUR |
| 1000+ | 2.29 EUR |
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Technische Details IAUA170N10S5N031AUMA1 Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOF-5, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 6405 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: PG-HSOF-5-4, Vgs(th) (Max) @ Id: 3.8V @ 110µA, Power Dissipation (Max): 197W (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 85A, 10V, Current - Continuous Drain (Id) @ 25°C: 170A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 5-PowerSFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote IAUA170N10S5N031AUMA1 nach Preis ab 2.63 EUR bis 6.05 EUR
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IAUA170N10S5N031AUMA1 | Infineon Technologies |
 Description: MOSFET_(75V 120V( PG-HSOF-5Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 6405 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-HSOF-5-4 Vgs(th) (Max) @ Id: 3.8V @ 110µA Power Dissipation (Max): 197W (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 85A, 10V Current - Continuous Drain (Id) @ 25°C: 170A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 5-PowerSFN Packaging: Cut Tape (CT) |
auf Bestellung 1472 Stücke: Lieferzeit 10-14 Tag (e) |
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| IAUA170N10S5N031AUMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOF-5
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6405 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-HSOF-5-4
Vgs(th) (Max) @ Id: 3.8V @ 110µA
Power Dissipation (Max): 197W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 85A, 10V
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Cut Tape (CT)
Description: MOSFET_(75V 120V( PG-HSOF-5
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6405 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-HSOF-5-4
Vgs(th) (Max) @ Id: 3.8V @ 110µA
Power Dissipation (Max): 197W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 85A, 10V
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Cut Tape (CT)
auf Bestellung 1472 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.05 EUR |
| 10+ | 4.07 EUR |
| 100+ | 2.88 EUR |
| 500+ | 2.63 EUR |