IAUA170N10S5N031AUMA1 Infineon Technologies
auf Bestellung 1566 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.53 EUR |
| 10+ | 3.89 EUR |
| 100+ | 2.8 EUR |
| 500+ | 2.41 EUR |
| 1000+ | 2.29 EUR |
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Technische Details IAUA170N10S5N031AUMA1 Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOF-5, Packaging: Tape & Reel (TR), Package / Case: 5-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tj), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 85A, 10V, Power Dissipation (Max): 197W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 110µA, Supplier Device Package: PG-HSOF-5-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6405 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote IAUA170N10S5N031AUMA1 nach Preis ab 2.63 EUR bis 6.05 EUR
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IAUA170N10S5N031AUMA1 | Hersteller : Infineon Technologies |
 Description: MOSFET_(75V 120V( PG-HSOF-5Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tj) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 85A, 10V Power Dissipation (Max): 197W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 110µA Supplier Device Package: PG-HSOF-5-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6405 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1472 Stücke: Lieferzeit 10-14 Tag (e) |
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| IAUA170N10S5N031AUMA1 | Hersteller : Infineon Technologies |
SP005423391 |
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| IAUA170N10S5N031AUMA1 | Hersteller : INFINEON TECHNOLOGIES |
IAUA170N10S5N031 SMD N channel transistors |
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IAUA170N10S5N031AUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET_(75V 120V( PG-HSOF-5 Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tj) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 85A, 10V Power Dissipation (Max): 197W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 110µA Supplier Device Package: PG-HSOF-5-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6405 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |