IAUA180N04S5N012 Infineon Technologies

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 720A; 125W, Type of transistor: N-MOSFET, Technology: OptiMOS™ 5, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 180A, Pulsed drain current: 720A, Power dissipation: 125W, Case: PG-HSOF-5, Gate-source voltage: ±20V, On-state resistance: 1.4mΩ, Mounting: SMD, Gate charge: 0.1µC, Kind of package: reel; tape, Kind of channel: enhancement.