IAUA180N10S5N029AUMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tj)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 90A, 10V
Power Dissipation (Max): 221W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOF-5-4
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7673 pF @ 50 V
auf Bestellung 1926 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 5.83 EUR |
| 10+ | 4.89 EUR |
| 100+ | 3.95 EUR |
| 500+ | 3.51 EUR |
| 1000+ | 3.01 EUR |
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Technische Details IAUA180N10S5N029AUMA1 Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOF-5, Packaging: Tape & Reel (TR), Package / Case: 5-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tj), Rds On (Max) @ Id, Vgs: 2.9mOhm @ 90A, 10V, Power Dissipation (Max): 221W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 130µA, Supplier Device Package: PG-HSOF-5-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7673 pF @ 50 V.
Weitere Produktangebote IAUA180N10S5N029AUMA1 nach Preis ab 3.04 EUR bis 5.86 EUR
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IAUA180N10S5N029AUMA1 | Hersteller : Infineon Technologies |
MOSFET MOSFET_(75V 120V( |
auf Bestellung 1697 Stücke: Lieferzeit 10-14 Tag (e) |
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| IAUA180N10S5N029AUMA1 | Hersteller : Infineon Technologies |
SP005423385 |
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| IAUA180N10S5N029AUMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 561A; 221W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 24A Pulsed drain current: 561A Power dissipation: 221W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Gate charge: 105nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
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IAUA180N10S5N029AUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET_(75V 120V( PG-HSOF-5 Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tj) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 90A, 10V Power Dissipation (Max): 221W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 130µA Supplier Device Package: PG-HSOF-5-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7673 pF @ 50 V |
Produkt ist nicht verfügbar |
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| IAUA180N10S5N029AUMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 561A; 221W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 24A Pulsed drain current: 561A Power dissipation: 221W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Gate charge: 105nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |