IAUA200N04S5N010AUMA1 Infineon Technologies
Hersteller: Infineon TechnologiesTrans MOSFET N-CH 40V 200A Automotive AEC-Q101 6-Pin(5+Tab) HSOF T/R
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 1.78 EUR |
| 4000+ | 1.68 EUR |
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Technische Details IAUA200N04S5N010AUMA1 Infineon Technologies
Description: MOSFET N-CH 40V 200A 5HSOF, Packaging: Tape & Reel (TR), Package / Case: 5-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V, Power Dissipation (Max): 167W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 100µA, Supplier Device Package: PG-HSOF-5-1, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote IAUA200N04S5N010AUMA1 nach Preis ab 1.41 EUR bis 4.24 EUR
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IAUA200N04S5N010AUMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 200A Automotive AEC-Q101 6-Pin(5+Tab) HSOF T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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IAUA200N04S5N010AUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 200A 5HSOF Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 100µA Supplier Device Package: PG-HSOF-5-1 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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IAUA200N04S5N010AUMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 200A Automotive AEC-Q101 6-Pin(5+Tab) HSOF T/R |
auf Bestellung 1538 Stücke: Lieferzeit 14-21 Tag (e) |
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IAUA200N04S5N010AUMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 200A Automotive AEC-Q101 6-Pin(5+Tab) HSOF T/R |
auf Bestellung 1538 Stücke: Lieferzeit 14-21 Tag (e) |
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IAUA200N04S5N010AUMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 200A Automotive AEC-Q101 6-Pin(5+Tab) HSOF T/R |
auf Bestellung 1092 Stücke: Lieferzeit 14-21 Tag (e) |
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IAUA200N04S5N010AUMA1 | Hersteller : Infineon Technologies |
MOSFET MOSFET_(20V 40V) |
auf Bestellung 2730 Stücke: Lieferzeit 10-14 Tag (e) |
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IAUA200N04S5N010AUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 200A 5HSOF Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 100µA Supplier Device Package: PG-HSOF-5-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4044 Stücke: Lieferzeit 10-14 Tag (e) |
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IAUA200N04S5N010AUMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 200A Automotive 6-Pin(5+Tab) HSOF T/R |
Produkt ist nicht verfügbar |
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| IAUA200N04S5N010AUMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 200A; Idm: 800A; 167W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 200A Pulsed drain current: 800A Power dissipation: 167W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 1mΩ Mounting: SMD Gate charge: 132nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| IAUA200N04S5N010AUMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 200A; Idm: 800A; 167W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 200A Pulsed drain current: 800A Power dissipation: 167W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 1mΩ Mounting: SMD Gate charge: 132nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |