IAUA220N08S5N021AUMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tj)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 120µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7219 pF @ 40 V
Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tj)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 120µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7219 pF @ 40 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2000+ | 2.78 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IAUA220N08S5N021AUMA1 Infineon Technologies
Description: INFINEON - IAUA220N08S5N021AUMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 220 A, 0.0018 ohm, HSOF, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 80V, rohsCompliant: YES, Dauer-Drainstrom Id: 220A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3.8V, euEccn: NLR, Verlustleistung: 211W, Bauform - Transistor: HSOF, Anzahl der Pins: 5Pin(s), Produktpalette: OptiMOS -5 Series, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.0018ohm, SVHC: No SVHC (17-Jan-2023).
Weitere Produktangebote IAUA220N08S5N021AUMA1 nach Preis ab 2.85 EUR bis 5.72 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IAUA220N08S5N021AUMA1 | Hersteller : Infineon Technologies | MOSFET MOSFET_(75V 120V( |
auf Bestellung 1990 Stücke: Lieferzeit 10-14 Tag (e) |
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IAUA220N08S5N021AUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET_(75V 120V( PG-HSOF-5 Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220A (Tj) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 10V Power Dissipation (Max): 211W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 120µA Supplier Device Package: PG-HSOF-5-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7219 pF @ 40 V |
auf Bestellung 2970 Stücke: Lieferzeit 10-14 Tag (e) |
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IAUA220N08S5N021AUMA1 | Hersteller : INFINEON |
Description: INFINEON - IAUA220N08S5N021AUMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 220 A, 0.0018 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 220A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 211W Bauform - Transistor: HSOF Anzahl der Pins: 5Pin(s) Produktpalette: OptiMOS -5 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0018ohm SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 1272 Stücke: Lieferzeit 14-21 Tag (e) |
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IAUA220N08S5N021AUMA1 | Hersteller : INFINEON |
Description: INFINEON - IAUA220N08S5N021AUMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 220 A, 0.0018 ohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 220A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 211W Bauform - Transistor: HSOF Anzahl der Pins: 5Pin(s) Produktpalette: OptiMOS -5 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0018ohm SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 1272 Stücke: Lieferzeit 14-21 Tag (e) |
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IAUA220N08S5N021AUMA1 | Hersteller : Infineon Technologies | Automotive Power Mosfet |
Produkt ist nicht verfügbar |
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IAUA220N08S5N021AUMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 27A; Idm: 677A; 211W; PG-HSOF-5 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 27A Pulsed drain current: 677A Power dissipation: 211W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 105nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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IAUA220N08S5N021AUMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 27A; Idm: 677A; 211W; PG-HSOF-5 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 27A Pulsed drain current: 677A Power dissipation: 211W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 105nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |