IAUA250N04S6N006AUMA1 INFINEON
Hersteller: INFINEON
Description: INFINEON - IAUA250N04S6N006AUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 450 A, 470 µohm, HSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 450A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
MSL: MSL 3 - 168 Stunden
usEccn: EAR99
Verlustleistung Pd: 250W
Gate-Source-Schwellenspannung, max.: 2.6V
euEccn: NLR
Verlustleistung: 250W
Bauform - Transistor: HSOF
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 5Pin(s)
Produktpalette: OptiMOS 6
productTraceability: No
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 470µohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 470µohm
SVHC: No SVHC (27-Jun-2018)
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Technische Details IAUA250N04S6N006AUMA1 INFINEON
Description: INFINEON - IAUA250N04S6N006AUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 450 A, 470 µohm, HSOF, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 40V, rohsCompliant: YES, Dauer-Drainstrom Id: 450A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: N, MSL: MSL 3 - 168 Stunden, usEccn: EAR99, Verlustleistung Pd: 250W, Gate-Source-Schwellenspannung, max.: 2.6V, euEccn: NLR, Verlustleistung: 250W, Bauform - Transistor: HSOF, Qualifizierungsstandard der Automobilindustrie: AEC-Q101, Anzahl der Pins: 5Pin(s), Produktpalette: OptiMOS 6, productTraceability: No, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 470µohm, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 470µohm, SVHC: No SVHC (27-Jun-2018).
Weitere Produktangebote IAUA250N04S6N006AUMA1 nach Preis ab 3.19 EUR bis 11.3 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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IAUA250N04S6N006AUMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V) PG-HSOF-5 Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 450A (Tj) Rds On (Max) @ Id, Vgs: 0.64mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3V @ 145µA Supplier Device Package: PG-HSOF-5-4 Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11064 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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IAUA250N04S6N006AUMA1 | ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IAUA250N04S6N006AUMA1 - IAUA250N04S6N006 - MOSFET20V,40V tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 2218 Stücke: Lieferzeit 14-21 Tag (e) |
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IAUA250N04S6N006AUMA1 | Infineon Technologies |
MOSFET MOSFET_(20V 40V) |
auf Bestellung 2247 Stücke: Lieferzeit 10-14 Tag (e) |
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IAUA250N04S6N006AUMA1 | INFINEON |
Description: INFINEON - IAUA250N04S6N006AUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 450 A, 470 µohm, HSOF, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 450A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y MSL: MSL 3 - 168 Stunden usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.6V euEccn: NLR Verlustleistung: 250W Bauform - Transistor: HSOF Anzahl der Pins: 5Pin(s) Produktpalette: OptiMOS 6 productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 470µohm SVHC: No SVHC (27-Jun-2018) |
auf Bestellung 3892 Stücke: Lieferzeit 14-21 Tag (e) |
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IAUA250N04S6N006AUMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V) PG-HSOF-5 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 11064 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Part Status: Not For New Designs Supplier Device Package: PG-HSOF-5-4 Vgs(th) (Max) @ Id: 3V @ 145µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 0.64mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 450A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 5-PowerSFN Packaging: Cut Tape (CT) |
auf Bestellung 7292 Stücke: Lieferzeit 10-14 Tag (e) |
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| IAUA250N04S6N006AUMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V) PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 450A (Tj)
Rds On (Max) @ Id, Vgs: 0.64mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 145µA
Supplier Device Package: PG-HSOF-5-4
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11064 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET_(20V 40V) PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 450A (Tj)
Rds On (Max) @ Id, Vgs: 0.64mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 145µA
Supplier Device Package: PG-HSOF-5-4
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11064 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 3.93 EUR |
| 4000+ | 3.72 EUR |
| IAUA250N04S6N006AUMA1 |
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Hersteller: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - IAUA250N04S6N006AUMA1 - IAUA250N04S6N006 - MOSFET20V,40V
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
Description: ROCHESTER ELECTRONICS - IAUA250N04S6N006AUMA1 - IAUA250N04S6N006 - MOSFET20V,40V
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 2218 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 125+ | 5.88 EUR |
| IAUA250N04S6N006AUMA1 |
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Hersteller: Infineon Technologies
MOSFET MOSFET_(20V 40V)
MOSFET MOSFET_(20V 40V)
auf Bestellung 2247 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.17 EUR |
| 10+ | 7.27 EUR |
| 100+ | 6.24 EUR |
| 500+ | 5.76 EUR |
| 1000+ | 5.28 EUR |
| 2000+ | 4.49 EUR |
| 4000+ | 4.46 EUR |
| IAUA250N04S6N006AUMA1 |
|
Hersteller: INFINEON
Description: INFINEON - IAUA250N04S6N006AUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 450 A, 470 µohm, HSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 450A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: MSL 3 - 168 Stunden
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.6V
euEccn: NLR
Verlustleistung: 250W
Bauform - Transistor: HSOF
Anzahl der Pins: 5Pin(s)
Produktpalette: OptiMOS 6
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 470µohm
SVHC: No SVHC (27-Jun-2018)
Description: INFINEON - IAUA250N04S6N006AUMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 450 A, 470 µohm, HSOF, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 450A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: MSL 3 - 168 Stunden
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.6V
euEccn: NLR
Verlustleistung: 250W
Bauform - Transistor: HSOF
Anzahl der Pins: 5Pin(s)
Produktpalette: OptiMOS 6
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 470µohm
SVHC: No SVHC (27-Jun-2018)
auf Bestellung 3892 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 10.29 EUR |
| 37+ | 6.31 EUR |
| 100+ | 4.28 EUR |
| 500+ | 3.49 EUR |
| 1000+ | 3.19 EUR |
| IAUA250N04S6N006AUMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V) PG-HSOF-5
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 11064 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-HSOF-5-4
Vgs(th) (Max) @ Id: 3V @ 145µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.64mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 450A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Cut Tape (CT)
Description: MOSFET_(20V 40V) PG-HSOF-5
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 11064 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-HSOF-5-4
Vgs(th) (Max) @ Id: 3V @ 145µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.64mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 450A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Cut Tape (CT)
auf Bestellung 7292 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.3 EUR |
| 10+ | 7.52 EUR |
| 100+ | 5.38 EUR |
| 500+ | 4.47 EUR |
| 1000+ | 4.41 EUR |