IAUA250N04S6N007AUMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 7.76 EUR |
| 10+ | 6.95 EUR |
| 2000+ | 3.8 EUR |
| 4000+ | 3.63 EUR |
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Technische Details IAUA250N04S6N007AUMA1 Infineon Technologies
Description: MOSFET_(20V 40V) PG-HSOF-5, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Part Status: Not For New Designs, Supplier Device Package: PG-HSOF-5-4, Vgs(th) (Max) @ Id: 3V @ 130µA, Power Dissipation (Max): 250W (Tc), Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 435A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 5-PowerSFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote IAUA250N04S6N007AUMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IAUA250N04S6N007AUMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V) PG-HSOF-5 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Part Status: Not For New Designs Supplier Device Package: PG-HSOF-5-4 Vgs(th) (Max) @ Id: 3V @ 130µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 435A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 5-PowerSFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IAUA250N04S6N007AUMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V) PG-HSOF-5 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Part Status: Not For New Designs Supplier Device Package: PG-HSOF-5-4 Vgs(th) (Max) @ Id: 3V @ 130µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 435A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 5-PowerSFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IAUA250N04S6N007AUMA1 |
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V) PG-HSOF-5
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-HSOF-5-4
Vgs(th) (Max) @ Id: 3V @ 130µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Tape & Reel (TR)
Description: MOSFET_(20V 40V) PG-HSOF-5
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-HSOF-5-4
Vgs(th) (Max) @ Id: 3V @ 130µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IAUA250N04S6N007AUMA1 |
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V) PG-HSOF-5
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-HSOF-5-4
Vgs(th) (Max) @ Id: 3V @ 130µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Cut Tape (CT)
Description: MOSFET_(20V 40V) PG-HSOF-5
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-HSOF-5-4
Vgs(th) (Max) @ Id: 3V @ 130µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH