IAUA250N08S5N018AUMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 6.64 EUR |
| 10+ | 4.4 EUR |
| 100+ | 3.13 EUR |
| 500+ | 2.92 EUR |
| 1000+ | 2.64 EUR |
| 2000+ | 2.46 EUR |
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Technische Details IAUA250N08S5N018AUMA1 Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOF-5, Packaging: Tape & Reel (TR), Package / Case: 5-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 250A (Tj), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V, Power Dissipation (Max): 238W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 150µA, Supplier Device Package: PG-HSOF-5-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8715 pF @ 40 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote IAUA250N08S5N018AUMA1 nach Preis ab 2.87 EUR bis 6.65 EUR
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IAUA250N08S5N018AUMA1 | Infineon Technologies |
 Description: MOSFET_(75V 120V( PG-HSOF-5Packaging: Cut Tape (CT) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250A (Tj) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V Power Dissipation (Max): 238W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 150µA Supplier Device Package: PG-HSOF-5-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8715 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1805 Stücke: Lieferzeit 10-14 Tag (e) |
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| IAUA250N08S5N018AUMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tj)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 150µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8715 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tj)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 150µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8715 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1805 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.65 EUR |
| 10+ | 4.39 EUR |
| 100+ | 3.11 EUR |
| 500+ | 2.87 EUR |