IAUC100N04S6L014ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IAUC100N04S6L014ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 0.97 EUR |
| 10000+ | 0.93 EUR |
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Technische Details IAUC100N04S6L014ATMA1 Infineon Technologies
Description: IAUC100N04S6L014ATMA1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 2V @ 50µA, Supplier Device Package: PG-TDSON-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote IAUC100N04S6L014ATMA1 nach Preis ab 1.02 EUR bis 3.61 EUR
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IAUC100N04S6L014ATMA1 | Hersteller : Infineon Technologies |
Description: IAUC100N04S6L014ATMA1 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: PG-TDSON-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 23783 Stücke: Lieferzeit 10-14 Tag (e) |
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IAUC100N04S6L014ATMA1 | Hersteller : Infineon Technologies |
MOSFET MOSFET_(20V 40V) |
auf Bestellung 8839 Stücke: Lieferzeit 14-28 Tag (e) |
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| IAUC100N04S6L014ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 400A Power dissipation: 100W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 2mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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| IAUC100N04S6L014ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 400A Power dissipation: 100W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 2mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |