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Technische Details IAUC100N04S6L025 Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 83A; Idm: 400A; 62W, Type of transistor: N-MOSFET, Technology: OptiMOS™ 6, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 83A, Power dissipation: 62W, Case: PG-TDSON-8, Gate-source voltage: ±16V, On-state resistance: 3.6mΩ, Mounting: SMD, Gate charge: 34nC, Kind of channel: enhancement, Kind of package: reel; tape, Pulsed drain current: 400A.
Weitere Produktangebote IAUC100N04S6L025
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| IAUC100N04S6L025ATMA1 | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 83A; Idm: 400A; 62W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 83A Power dissipation: 62W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 34nC Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 400A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IAUC100N04S6L025ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 83A; Idm: 400A; 62W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 83A
Power dissipation: 62W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 400A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 83A; Idm: 400A; 62W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 83A
Power dissipation: 62W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 400A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH