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IAUC100N04S6N022ATMA1

IAUC100N04S6N022ATMA1 Infineon Technologies


Infineon-IAUC100N04S6N022-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c3edae10df3 Hersteller: Infineon Technologies
Description: IAUC100N04S6N022ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.26mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 32µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2421 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4273 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.99 EUR
13+1.38 EUR
100+1.07 EUR
500+0.85 EUR
1000+0.77 EUR
2000+0.76 EUR
Mindestbestellmenge: 9
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Technische Details IAUC100N04S6N022ATMA1 Infineon Technologies

Description: IAUC100N04S6N022ATMA1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 2.26mOhm @ 50A, 10V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 3V @ 32µA, Supplier Device Package: PG-TDSON-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2421 pF @ 25 V, Qualification: AEC-Q101.

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IAUC100N04S6N022ATMA1 IAUC100N04S6N022ATMA1 Hersteller : Infineon Technologies Infineon_IAUC100N04S6N022_DataSheet_v01_00_EN-1840653.pdf MOSFETs N
auf Bestellung 6830 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.45 EUR
10+1.83 EUR
100+1.30 EUR
500+1.03 EUR
1000+0.87 EUR
5000+0.79 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IAUC100N04S6N022ATMA1 IAUC100N04S6N022ATMA1 Hersteller : Infineon Technologies infineon-iauc100n04s6n022-datasheet-v01_00-en.pdf Trans MOSFET N-CH 40V 100A Automotive 8-Pin TDSON EP T/R
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IAUC100N04S6N022ATMA1 Hersteller : INFINEON TECHNOLOGIES Infineon-IAUC100N04S6N022-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c3edae10df3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 96A; Idm: 400A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 96A
Pulsed drain current: 400A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
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IAUC100N04S6N022ATMA1 IAUC100N04S6N022ATMA1 Hersteller : Infineon Technologies Infineon-IAUC100N04S6N022-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c3edae10df3 Description: IAUC100N04S6N022ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.26mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 32µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2421 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC100N04S6N022ATMA1 Hersteller : INFINEON TECHNOLOGIES Infineon-IAUC100N04S6N022-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c3edae10df3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 96A; Idm: 400A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 96A
Pulsed drain current: 400A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH