IAUC100N04S6N022ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IAUC100N04S6N022ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.26mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 32µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2421 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4273 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 1.99 EUR |
| 13+ | 1.38 EUR |
| 100+ | 1.07 EUR |
| 500+ | 0.85 EUR |
| 1000+ | 0.77 EUR |
| 2000+ | 0.76 EUR |
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Technische Details IAUC100N04S6N022ATMA1 Infineon Technologies
Description: IAUC100N04S6N022ATMA1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 2.26mOhm @ 50A, 10V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 3V @ 32µA, Supplier Device Package: PG-TDSON-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2421 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote IAUC100N04S6N022ATMA1 nach Preis ab 0.79 EUR bis 2.45 EUR
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IAUC100N04S6N022ATMA1 | Hersteller : Infineon Technologies |
MOSFETs N |
auf Bestellung 6830 Stücke: Lieferzeit 10-14 Tag (e) |
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IAUC100N04S6N022ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 100A Automotive 8-Pin TDSON EP T/R |
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| IAUC100N04S6N022ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 96A; Idm: 400A; 75W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 96A Pulsed drain current: 400A Power dissipation: 75W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhancement Technology: OptiMOS™ 6 Anzahl je Verpackung: 5000 Stücke |
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IAUC100N04S6N022ATMA1 | Hersteller : Infineon Technologies |
Description: IAUC100N04S6N022ATMA1 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.26mOhm @ 50A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 3V @ 32µA Supplier Device Package: PG-TDSON-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2421 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| IAUC100N04S6N022ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 96A; Idm: 400A; 75W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 96A Pulsed drain current: 400A Power dissipation: 75W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhancement Technology: OptiMOS™ 6 |
Produkt ist nicht verfügbar |