IAUC100N08S5N031ATMA1 Infineon Technologies
auf Bestellung 5440 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.17 EUR |
| 10+ | 3.10 EUR |
| 100+ | 2.24 EUR |
| 500+ | 1.85 EUR |
| 1000+ | 1.78 EUR |
| 2500+ | 1.69 EUR |
| 5000+ | 1.58 EUR |
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Technische Details IAUC100N08S5N031ATMA1 Infineon Technologies
Description: MOSFET N-CH 80V 100A TDSON-8-34, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V, Power Dissipation (Max): 167W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 95µA, Supplier Device Package: PG-TDSON-8-34, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5525 pF @ 40 V, Qualification: AEC-Q101.
Weitere Produktangebote IAUC100N08S5N031ATMA1 nach Preis ab 1.72 EUR bis 4.61 EUR
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IAUC100N08S5N031ATMA1 | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 80V 100A TDSON-8-34Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 95µA Supplier Device Package: PG-TDSON-8-34 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5525 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3485 Stücke: Lieferzeit 10-14 Tag (e) |
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| IAUC100N08S5N031ATMA1 | Hersteller : Infineon Technologies |
N Channel Power MOSFET |
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| IAUC100N08S5N031ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W Case: PG-TDSON-8 Technology: OptiMOS™ 5 Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 400A Mounting: SMD Drain-source voltage: 80V Drain current: 100A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET Power dissipation: 167W Polarisation: unipolar Kind of package: reel; tape Anzahl je Verpackung: 5000 Stücke |
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IAUC100N08S5N031ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 80V 100A TDSON-8-34 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 95µA Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5525 pF @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| IAUC100N08S5N031ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W Case: PG-TDSON-8 Technology: OptiMOS™ 5 Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 400A Mounting: SMD Drain-source voltage: 80V Drain current: 100A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET Power dissipation: 167W Polarisation: unipolar Kind of package: reel; tape |
Produkt ist nicht verfügbar |