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IAUC100N08S5N031ATMA1

IAUC100N08S5N031ATMA1 Infineon Technologies

Infineon-IAUC100N08S5N031-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a54445630016
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 100A TDSON-8-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 95µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5525 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+1.47 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IAUC100N08S5N031ATMA1 Infineon Technologies

Description: MOSFET N-CH 80V 100A TDSON-8-34, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V, Power Dissipation (Max): 167W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 95µA, Supplier Device Package: PG-TDSON-8-34, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5525 pF @ 40 V, Qualification: AEC-Q101.

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IAUC100N08S5N031ATMA1 IAUC100N08S5N031ATMA1 Infineon Technologies Infineon_IAUC100N08S5N031_DS_v01_00_EN.pdf MOSFETs MOSFET_(75V 120V(
auf Bestellung 6338 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.8 EUR
10+3.12 EUR
100+2.15 EUR
500+1.78 EUR
1000+1.66 EUR
2500+1.56 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IAUC100N08S5N031ATMA1 IAUC100N08S5N031ATMA1 Infineon Technologies Infineon-IAUC100N08S5N031-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a54445630016 Description: MOSFET N-CH 80V 100A TDSON-8-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 95µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5525 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7017 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.21 EUR
10+3.37 EUR
100+2.32 EUR
500+1.87 EUR
1000+1.72 EUR
2000+1.6 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IAUC100N08S5N031ATMA1 Infineon_IAUC100N08S5N031_DS_v01_00_EN.pdf
IAUC100N08S5N031ATMA1
Hersteller: Infineon Technologies
MOSFETs MOSFET_(75V 120V(
auf Bestellung 6338 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+4.8 EUR
10+3.12 EUR
100+2.15 EUR
500+1.78 EUR
1000+1.66 EUR
2500+1.56 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IAUC100N08S5N031ATMA1 Infineon-IAUC100N08S5N031-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a54445630016
IAUC100N08S5N031ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 100A TDSON-8-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 95µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5525 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7017 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+5.21 EUR
10+3.37 EUR
100+2.32 EUR
500+1.87 EUR
1000+1.72 EUR
2000+1.6 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH