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IAUC100N08S5N043ATMA1

IAUC100N08S5N043ATMA1 Infineon Technologies

Infineon-IAUC100N08S5N043-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a528eb6b0010
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 100A 8TDSON-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 63µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3860 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+1.22 EUR
10000+1.15 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IAUC100N08S5N043ATMA1 Infineon Technologies

Description: MOSFET N-CH 80V 100A 8TDSON-34, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 63µA, Supplier Device Package: PG-TDSON-8-34, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3860 pF @ 40 V, Qualification: AEC-Q101.

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IAUC100N08S5N043ATMA1 IAUC100N08S5N043ATMA1 Infineon Technologies Infineon_IAUC100N08S5N043_DS_v01_00_EN.pdf MOSFETs MOSFET_(75V 120V(
auf Bestellung 11195 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.28 EUR
10+2.75 EUR
100+1.87 EUR
500+1.57 EUR
1000+1.4 EUR
2500+1.33 EUR
5000+1.26 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IAUC100N08S5N043ATMA1 IAUC100N08S5N043ATMA1 Infineon Technologies Infineon-IAUC100N08S5N043-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a528eb6b0010 Description: MOSFET N-CH 80V 100A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 63µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3860 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 15484 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.45 EUR
10+2.86 EUR
100+1.95 EUR
500+1.56 EUR
1000+1.44 EUR
2000+1.33 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IAUC100N08S5N043ATMA1 Infineon_IAUC100N08S5N043_DS_v01_00_EN.pdf
IAUC100N08S5N043ATMA1
Hersteller: Infineon Technologies
MOSFETs MOSFET_(75V 120V(
auf Bestellung 11195 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+4.28 EUR
10+2.75 EUR
100+1.87 EUR
500+1.57 EUR
1000+1.4 EUR
2500+1.33 EUR
5000+1.26 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IAUC100N08S5N043ATMA1 Infineon-IAUC100N08S5N043-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a528eb6b0010
IAUC100N08S5N043ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 100A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 63µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3860 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 15484 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+4.45 EUR
10+2.86 EUR
100+1.95 EUR
500+1.56 EUR
1000+1.44 EUR
2000+1.33 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH