IAUC100N10S5L054ATMA1 Infineon Technologies
auf Bestellung 4998 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.54 EUR |
| 10+ | 2.27 EUR |
| 100+ | 1.54 EUR |
| 500+ | 1.28 EUR |
| 1000+ | 1.13 EUR |
| 2500+ | 1.05 EUR |
| 5000+ | 1.01 EUR |
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Technische Details IAUC100N10S5L054ATMA1 Infineon Technologies
Description: MOSFET_(75V 120V( PG-TDSON-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 101A (Tj), Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 64µA, Supplier Device Package: PG-TDSON-8-34, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3744 pF @ 50 V.
Weitere Produktangebote IAUC100N10S5L054ATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IAUC100N10S5L054ATMA1 | Hersteller : Infineon Technologies |
 SP005423079 |
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IAUC100N10S5L054ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET_(75V 120V( PG-TDSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 101A (Tj) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 64µA Supplier Device Package: PG-TDSON-8-34 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3744 pF @ 50 V |
Produkt ist nicht verfügbar |
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| IAUC100N10S5L054ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 17A; Idm: 400A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 17A Pulsed drain current: 400A Power dissipation: 130W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 8.1mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhancement Technology: OptiMOS™ 5 |
Produkt ist nicht verfügbar |