IAUC100N10S5L054ATMA1 Infineon Technologies

Description: MOSFET_(75V 120V( PG-TDSON-8, Input Capacitance (Ciss) (Max) @ Vds: 3744 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PG-TDSON-8-34, Vgs(th) (Max) @ Id: 2.2V @ 64µA, Power Dissipation (Max): 130W (Tc), Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 101A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).