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IAUC120N04S6L005ATMA1

IAUC120N04S6L005ATMA1 Infineon Technologies

Infineon-IAUC120N04S6L005-DataSheet-v01_00-EN.pdf?fileId=5546d46275b79adb0175e129ada610b6
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 120A 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 0.55mOhm @ 60A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11203 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+1.64 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IAUC120N04S6L005ATMA1 Infineon Technologies

Description: MOSFET N-CH 40V 120A 8TDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tj), Rds On (Max) @ Id, Vgs: 0.55mOhm @ 60A, 10V, Power Dissipation (Max): 187W (Tc), Vgs(th) (Max) @ Id: 2V @ 130µA, Supplier Device Package: PG-TDSON-8-53, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11203 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote IAUC120N04S6L005ATMA1 nach Preis ab 2 EUR bis 5.93 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IAUC120N04S6L005ATMA1 IAUC120N04S6L005ATMA1 Infineon Technologies Infineon-IAUC120N04S6L005-DataSheet-v01_00-EN.pdf?fileId=5546d46275b79adb0175e129ada610b6 Description: MOSFET N-CH 40V 120A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 0.55mOhm @ 60A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11203 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5635 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.14 EUR
10+3.35 EUR
100+2.33 EUR
500+2 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IAUC120N04S6L005ATMA1 IAUC120N04S6L005ATMA1 Infineon Technologies Infineon_IAUC120N04S6L005_DataSheet_v01_00_EN.pdf MOSFETs MOSFET_(20V 40V)
auf Bestellung 5754 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.93 EUR
10+3.87 EUR
100+2.82 EUR
500+2.36 EUR
1000+2.2 EUR
2500+2.04 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IAUC120N04S6L005ATMA1 Infineon Technologies Infineon-IAUC120N04S6L005-DataSheet-v01_00-EN.pdf N-канальний ПТ, Udss, В = 40, Id = 120 А, Ciss, пФ @ Uds, В = 11203 @ 25, Qg, нКл = 177, Rds = 0,55 Ом, Ugs(th) = 2, Р, Вт = 187, Тексп, °C = -55...+175, Тип монт. = SMD,... Транзистори Корпус: PowerTDFN-8 Очікується: 1700 Од. вим: шт
Anzahl je Verpackung: 5000 Stücke
verfügbar 70 Stücke:
Im Einkaufswagen  Stück im Wert von  UAH
IAUC120N04S6L005ATMA1 Infineon-IAUC120N04S6L005-DataSheet-v01_00-EN.pdf?fileId=5546d46275b79adb0175e129ada610b6
IAUC120N04S6L005ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 120A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 0.55mOhm @ 60A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11203 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5635 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+5.14 EUR
10+3.35 EUR
100+2.33 EUR
500+2 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IAUC120N04S6L005ATMA1 Infineon_IAUC120N04S6L005_DataSheet_v01_00_EN.pdf
IAUC120N04S6L005ATMA1
Hersteller: Infineon Technologies
MOSFETs MOSFET_(20V 40V)
auf Bestellung 5754 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+5.93 EUR
10+3.87 EUR
100+2.82 EUR
500+2.36 EUR
1000+2.2 EUR
2500+2.04 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IAUC120N04S6L005ATMA1 Infineon-IAUC120N04S6L005-DataSheet-v01_00-EN.pdf
Hersteller: Infineon Technologies
N-канальний ПТ, Udss, В = 40, Id = 120 А, Ciss, пФ @ Uds, В = 11203 @ 25, Qg, нКл = 177, Rds = 0,55 Ом, Ugs(th) = 2, Р, Вт = 187, Тексп, °C = -55...+175, Тип монт. = SMD,... Транзистори Корпус: PowerTDFN-8 Очікується: 1700 Од. вим: шт
Anzahl je Verpackung: 5000 Stücke
verfügbar 70 Stücke:
Im Einkaufswagen  Stück im Wert von  UAH