IAUC120N04S6L008ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 40V 120A 8TDSON-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7910 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 1.86 EUR |
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Technische Details IAUC120N04S6L008ATMA1 Infineon Technologies
Description: MOSFET N-CH 40V 120A 8TDSON-33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 0.8mOhm @ 60A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 2V @ 90µA, Supplier Device Package: PG-TDSON-8-33, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7910 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote IAUC120N04S6L008ATMA1 nach Preis ab 1.88 EUR bis 4.29 EUR
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IAUC120N04S6L008ATMA1 | Hersteller : Infineon Technologies |
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auf Bestellung 10106 Stücke: Lieferzeit 10-14 Tag (e) |
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IAUC120N04S6L008ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 120A 8TDSON-33 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 0.8mOhm @ 60A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2V @ 90µA Supplier Device Package: PG-TDSON-8-33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7910 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 9865 Stücke: Lieferzeit 10-14 Tag (e) |
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IAUC120N04S6L008ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A Drain-source voltage: 40V Drain current: 120A On-state resistance: 0.8mΩ Type of transistor: N-MOSFET Power dissipation: 150W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: logic level Gate charge: 20nC Technology: OptiMOS™ 6 Kind of channel: enhanced Gate-source voltage: ±16V Pulsed drain current: 480A Mounting: SMD Case: PG-TDSON-8 Anzahl je Verpackung: 1 Stücke |
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IAUC120N04S6L008ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A Drain-source voltage: 40V Drain current: 120A On-state resistance: 0.8mΩ Type of transistor: N-MOSFET Power dissipation: 150W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: logic level Gate charge: 20nC Technology: OptiMOS™ 6 Kind of channel: enhanced Gate-source voltage: ±16V Pulsed drain current: 480A Mounting: SMD Case: PG-TDSON-8 |
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