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Technische Details IAUC120N04S6L009 Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 120A, Pulsed drain current: 480A, Power dissipation: 150W, Case: PG-TDSON-8, Gate-source voltage: ±16V, On-state resistance: 1.2mΩ, Mounting: SMD, Gate charge: 128nC, Kind of package: reel; tape, Kind of channel: enhancement, Technology: OptiMOS™ 6.
Weitere Produktangebote IAUC120N04S6L009
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IAUC120N04S6L009ATMA1 | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 150W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 1.2mΩ Mounting: SMD Gate charge: 128nC Kind of package: reel; tape Kind of channel: enhancement Technology: OptiMOS™ 6 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IAUC120N04S6L009ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH