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IAUC120N04S6N013ATMA1

IAUC120N04S6N013ATMA1 Infineon Technologies

Infineon-IAUC120N04S6N013-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1ca3ea611222 Hersteller: Infineon Technologies
Description: IAUC120N04S6N013ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.34mOhm @ 60A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 3V @ 60µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4260 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+1.15 EUR
10000+ 1.11 EUR
Mindestbestellmenge: 5000
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Technische Details IAUC120N04S6N013ATMA1 Infineon Technologies

Description: IAUC120N04S6N013ATMA1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1.34mOhm @ 60A, 10V, Power Dissipation (Max): 115W (Tc), Vgs(th) (Max) @ Id: 3V @ 60µA, Supplier Device Package: PG-TDSON-8, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4260 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

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IAUC120N04S6N013ATMA1 IAUC120N04S6N013ATMA1 Hersteller : Infineon Technologies Infineon_IAUC120N04S6N013_DataSheet_v01_00_EN-1840596.pdf MOSFET MOSFET_(20V 40V)
auf Bestellung 15000 Stücke:
Lieferzeit 136-140 Tag (e)
Anzahl Preis ohne MwSt
2+2.64 EUR
10+ 2.2 EUR
100+ 1.75 EUR
250+ 1.72 EUR
500+ 1.46 EUR
1000+ 1.19 EUR
5000+ 1.15 EUR
Mindestbestellmenge: 2
IAUC120N04S6N013ATMA1 IAUC120N04S6N013ATMA1 Hersteller : Infineon Technologies Infineon-IAUC120N04S6N013-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1ca3ea611222 Description: IAUC120N04S6N013ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.34mOhm @ 60A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 3V @ 60µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4260 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14470 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.66 EUR
10+ 2.21 EUR
100+ 1.76 EUR
500+ 1.49 EUR
1000+ 1.26 EUR
2000+ 1.2 EUR
Mindestbestellmenge: 7
IAUC120N04S6N013ATMA1 IAUC120N04S6N013ATMA1 Hersteller : Infineon Technologies infineon-iauc120n04s6n013-datasheet-v01_00-en.pdf Trans MOSFET N-CH 40V 150A Automotive 8-Pin TDSON EP T/R
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