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IAUC120N04S6N013ATMA1

IAUC120N04S6N013ATMA1 Infineon Technologies

Infineon-IAUC120N04S6N013-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1ca3ea611222
Hersteller: Infineon Technologies
Description: IAUC120N04S6N013ATMA1
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 3V @ 60µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 1.34mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.92 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IAUC120N04S6N013ATMA1 Infineon Technologies

Description: IAUC120N04S6N013ATMA1, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 4260 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Supplier Device Package: PG-TDSON-8, Vgs(th) (Max) @ Id: 3V @ 60µA, Power Dissipation (Max): 115W (Tc), Rds On (Max) @ Id, Vgs: 1.34mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).

Weitere Produktangebote IAUC120N04S6N013ATMA1 nach Preis ab 0.95 EUR bis 3.36 EUR

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IAUC120N04S6N013ATMA1 IAUC120N04S6N013ATMA1 Infineon Technologies Infineon_IAUC120N04S6N013_DataSheet_v01_00_EN.pdf MOSFETs MOSFET_(20V 40V)
auf Bestellung 10632 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.32 EUR
10+1.65 EUR
100+1.31 EUR
500+1.16 EUR
1000+1.1 EUR
2500+1.08 EUR
5000+0.95 EUR
Mindestbestellmenge: 2 Stücke
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IAUC120N04S6N013ATMA1 IAUC120N04S6N013ATMA1 Infineon Technologies Infineon-IAUC120N04S6N013-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1ca3ea611222 Description: IAUC120N04S6N013ATMA1
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 1.34mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 3V @ 60µA
Power Dissipation (Max): 115W (Tc)
auf Bestellung 10164 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.36 EUR
10+2.16 EUR
100+1.46 EUR
500+1.17 EUR
1000+1.12 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IAUC120N04S6N013ATMA1 Infineon_IAUC120N04S6N013_DataSheet_v01_00_EN.pdf
IAUC120N04S6N013ATMA1
Hersteller: Infineon Technologies
MOSFETs MOSFET_(20V 40V)
auf Bestellung 10632 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+2.32 EUR
10+1.65 EUR
100+1.31 EUR
500+1.16 EUR
1000+1.1 EUR
2500+1.08 EUR
5000+0.95 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IAUC120N04S6N013ATMA1 Infineon-IAUC120N04S6N013-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1ca3ea611222
IAUC120N04S6N013ATMA1
Hersteller: Infineon Technologies
Description: IAUC120N04S6N013ATMA1
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 1.34mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 3V @ 60µA
Power Dissipation (Max): 115W (Tc)
auf Bestellung 10164 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.36 EUR
10+2.16 EUR
100+1.46 EUR
500+1.17 EUR
1000+1.12 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH