IAUC120N06S5L011ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310A (Tj)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 60A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 1273 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.44 EUR |
| 10+ | 3.56 EUR |
| 100+ | 2.48 EUR |
| 500+ | 2.17 EUR |
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Technische Details IAUC120N06S5L011ATMA1 Infineon Technologies
Description: MOSFET_)40V 60V), Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 310A (Tj), Rds On (Max) @ Id, Vgs: 1.1mOhm @ 60A, 10V, Power Dissipation (Max): 188W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 130µA, Supplier Device Package: PG-TDSON-8-53, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote IAUC120N06S5L011ATMA1 nach Preis ab 1.85 EUR bis 5.46 EUR
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IAUC120N06S5L011ATMA1 | Hersteller : Infineon Technologies |
MOSFETs MOSFET_)40V 60V) |
auf Bestellung 9848 Stücke: Lieferzeit 10-14 Tag (e) |
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| IAUC120N06S5L011ATMA1 | Hersteller : Infineon Technologies |
IAUC120N06S5L011 Trans MOSFET T/R |
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IAUC120N06S5L011ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET_)40V 60V) Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310A (Tj) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 60A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 130µA Supplier Device Package: PG-TDSON-8-53 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |