IAUC120N06S5L022ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 60A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 65µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5651 pF @ 30 V
auf Bestellung 4918 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 2.75 EUR |
| 10+ | 2.29 EUR |
| 100+ | 1.82 EUR |
| 500+ | 1.54 EUR |
| 1000+ | 1.31 EUR |
| 2000+ | 1.24 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IAUC120N06S5L022ATMA1 Infineon Technologies
Description: MOSFET_)40V 60V), Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tj), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 60A, 10V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 65µA, Supplier Device Package: PG-TDSON-8-34, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5651 pF @ 30 V.
Weitere Produktangebote IAUC120N06S5L022ATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| IAUC120N06S5L022ATMA1 | Hersteller : Infineon Technologies |
Automotive Power Mosfet |
Produkt ist nicht verfügbar |
||
| IAUC120N06S5L022ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET_)40V 60V) Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tj) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 60A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 65µA Supplier Device Package: PG-TDSON-8-34 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5651 pF @ 30 V |
Produkt ist nicht verfügbar |
||
 |
IAUC120N06S5L022ATMA1 | Hersteller : Infineon Technologies |
MOSFET |
Produkt ist nicht verfügbar |