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IAUC120N06S5N032ATMA1

IAUC120N06S5N032ATMA1 Infineon Technologies

Infineon-IAUC120N06S5N032-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183a8692a6a2df6 Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 3.23mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 44µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3446 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.79 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IAUC120N06S5N032ATMA1 Infineon Technologies

Description: MOSFET_)40V 60V), Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tj), Rds On (Max) @ Id, Vgs: 3.23mOhm @ 60A, 10V, Power Dissipation (Max): 94W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 44µA, Supplier Device Package: PG-TDSON-8-34, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3446 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote IAUC120N06S5N032ATMA1 nach Preis ab 0.96 EUR bis 3.03 EUR

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IAUC120N06S5N032ATMA1 IAUC120N06S5N032ATMA1 Hersteller : Infineon Technologies Infineon-IAUC120N06S5N032-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183a8692a6a2df6 Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 3.23mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 44µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3446 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8610 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.03 EUR
10+1.92 EUR
100+1.3 EUR
500+1.03 EUR
1000+0.96 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IAUC120N06S5N032ATMA1 Hersteller : Infineon Technologies infineon-iauc120n06s5n032-datasheet-v01_00-en.pdf Automotive Power Mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC120N06S5N032ATMA1 IAUC120N06S5N032ATMA1 Hersteller : Infineon Technologies Infineon_IAUC120N06S5N032_DataSheet_v01_00_EN-3107200.pdf MOSFETs MOSFET_)40V 60V)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH