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IAUC26N10S5L245ATMA1

IAUC26N10S5L245ATMA1 Infineon Technologies

Infineon-IAUC26N10S5L245-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd3ea760202 Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tj)
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 13A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 762 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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Technische Details IAUC26N10S5L245ATMA1 Infineon Technologies

Description: MOSFET_(75V 120V( PG-TDSON-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tj), Rds On (Max) @ Id, Vgs: 24.5mOhm @ 13A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 13µA, Supplier Device Package: PG-TDSON-8-33, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 762 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.

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IAUC26N10S5L245ATMA1 Hersteller : Infineon Technologies infineon-iauc26n10s5l245-datasheet-v01_01-en.pdf SP005423082
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IAUC26N10S5L245ATMA1 Hersteller : INFINEON TECHNOLOGIES Infineon-IAUC26N10S5L245-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd3ea760202 IAUC26N10S5L245 SMD N channel transistors
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IAUC26N10S5L245ATMA1 IAUC26N10S5L245ATMA1 Hersteller : Infineon Technologies Infineon-IAUC26N10S5L245-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd3ea760202 Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tj)
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 13A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 762 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC26N10S5L245ATMA1 IAUC26N10S5L245ATMA1 Hersteller : Infineon Technologies Infineon_IAUC26N10S5L245_DataSheet_v01_01_EN-2486494.pdf MOSFETs MOSFET_(75V 120V(
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