IAUC26N10S5L245ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tj)
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 13A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 762 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4267 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.27 EUR |
| 13+ | 1.43 EUR |
| 100+ | 0.95 EUR |
| 500+ | 0.74 EUR |
| 1000+ | 0.67 EUR |
| 2000+ | 0.63 EUR |
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Technische Details IAUC26N10S5L245ATMA1 Infineon Technologies
Description: MOSFET_(75V 120V( PG-TDSON-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tj), Rds On (Max) @ Id, Vgs: 24.5mOhm @ 13A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 13µA, Supplier Device Package: PG-TDSON-8-33, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 762 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.
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| IAUC26N10S5L245ATMA1 | Hersteller : Infineon Technologies |
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| IAUC26N10S5L245ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7A; Idm: 104A; 40W; PG-TDSON-8 Case: PG-TDSON-8 Mounting: SMD On-state resistance: 37.8mΩ Drain current: 7A Gate-source voltage: ±20V Power dissipation: 40W Pulsed drain current: 104A Drain-source voltage: 100V Kind of channel: enhancement Technology: OptiMOS™ 5 Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 12nC Anzahl je Verpackung: 5000 Stücke |
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IAUC26N10S5L245ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET_(75V 120V( PG-TDSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tj) Rds On (Max) @ Id, Vgs: 24.5mOhm @ 13A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 13µA Supplier Device Package: PG-TDSON-8-33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 762 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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IAUC26N10S5L245ATMA1 | Hersteller : Infineon Technologies |
MOSFETs MOSFET_(75V 120V( |
Produkt ist nicht verfügbar |
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| IAUC26N10S5L245ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7A; Idm: 104A; 40W; PG-TDSON-8 Case: PG-TDSON-8 Mounting: SMD On-state resistance: 37.8mΩ Drain current: 7A Gate-source voltage: ±20V Power dissipation: 40W Pulsed drain current: 104A Drain-source voltage: 100V Kind of channel: enhancement Technology: OptiMOS™ 5 Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 12nC |
Produkt ist nicht verfügbar |