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IAUC26N10S5L245ATMA1 Infineon Technologies


Infineon-IAUC26N10S5L245-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd3ea760202 Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tj)
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 13A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 762 pF @ 50 V
auf Bestellung 5000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.73 EUR
Mindestbestellmenge: 5000
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Technische Details IAUC26N10S5L245ATMA1 Infineon Technologies

Description: MOSFET_(75V 120V( PG-TDSON-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tj), Rds On (Max) @ Id, Vgs: 24.5mOhm @ 13A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 13µA, Supplier Device Package: PG-TDSON-8-33, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 762 pF @ 50 V.

Weitere Produktangebote IAUC26N10S5L245ATMA1 nach Preis ab 0.76 EUR bis 1.85 EUR

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IAUC26N10S5L245ATMA1 Hersteller : Infineon Technologies Infineon-IAUC26N10S5L245-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd3ea760202 Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tj)
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 13A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 762 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.85 EUR
12+ 1.51 EUR
100+ 1.17 EUR
500+ 0.99 EUR
1000+ 0.81 EUR
2000+ 0.76 EUR
Mindestbestellmenge: 10
IAUC26N10S5L245ATMA1 Hersteller : Infineon Technologies infineon-iauc26n10s5l245-datasheet-v01_01-en.pdf SP005423082
Produkt ist nicht verfügbar
IAUC26N10S5L245ATMA1 Hersteller : INFINEON TECHNOLOGIES Infineon-IAUC26N10S5L245-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd3ea760202 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7A; Idm: 104A; 40W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7A
Pulsed drain current: 104A
Power dissipation: 40W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 37.8mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
IAUC26N10S5L245ATMA1 IAUC26N10S5L245ATMA1 Hersteller : Infineon Technologies Infineon_IAUC26N10S5L245_DataSheet_v01_01_EN-2486494.pdf MOSFET MOSFET_(75V 120V(
Produkt ist nicht verfügbar
IAUC26N10S5L245ATMA1 Hersteller : INFINEON TECHNOLOGIES Infineon-IAUC26N10S5L245-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd3ea760202 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7A; Idm: 104A; 40W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7A
Pulsed drain current: 104A
Power dissipation: 40W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 37.8mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar