IAUC40N08S5L140ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2V @ 15µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1982 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.24 EUR |
| 13+ | 1.41 EUR |
| 100+ | 0.93 EUR |
| 500+ | 0.73 EUR |
| 1000+ | 0.66 EUR |
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Technische Details IAUC40N08S5L140ATMA1 Infineon Technologies
Description: MOSFET_(75V 120V( PG-TDSON-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V, Power Dissipation (Max): 56W (Tc), Vgs(th) (Max) @ Id: 2V @ 15µA, Supplier Device Package: PG-TDSON-8-33, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 40 V, Qualification: AEC-Q101.
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| IAUC40N08S5L140ATMA1 | Hersteller : Infineon Technologies |
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IAUC40N08S5L140ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET_(75V 120V( PG-TDSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 2V @ 15µA Supplier Device Package: PG-TDSON-8-33 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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IAUC40N08S5L140ATMA1 | Hersteller : Infineon Technologies |
MOSFETs MOSFET_(75V 120V( |
Produkt ist nicht verfügbar |
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| IAUC40N08S5L140ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 28A; Idm: 160A; 56W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 28A Pulsed drain current: 160A Power dissipation: 56W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 18.6nC Kind of package: reel; tape Kind of channel: enhancement Technology: OptiMOS™ 5 |
Produkt ist nicht verfügbar |