IAUC41N06S5L100ATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 41A TDSON-8-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tj)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produktrezensionen
Produktbewertung abgeben
Technische Details IAUC41N06S5L100ATMA1 Infineon Technologies
Description: MOSFET N-CH 60V 41A TDSON-8-33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41A (Tj), Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 13µA, Supplier Device Package: PG-TDSON-8-33, Part Status: Active, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote IAUC41N06S5L100ATMA1 nach Preis ab 0.48 EUR bis 2.15 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IAUC41N06S5L100ATMA1 | Infineon Technologies |
MOSFETs MOSFET_)40V 60V) |
auf Bestellung 14557 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
IAUC41N06S5L100ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 41A TDSON-8-33 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tj) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 13µA Supplier Device Package: PG-TDSON-8-33 Grade: Automotive Part Status: Active Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 9159 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IAUC41N06S5L100ATMA1 |
|
Hersteller: Infineon Technologies
MOSFETs MOSFET_)40V 60V)
MOSFETs MOSFET_)40V 60V)
auf Bestellung 14557 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.97 EUR |
| 10+ | 1.24 EUR |
| 100+ | 0.82 EUR |
| 500+ | 0.64 EUR |
| 1000+ | 0.54 EUR |
| 5000+ | 0.48 EUR |
| IAUC41N06S5L100ATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 41A TDSON-8-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tj)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 41A TDSON-8-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tj)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 9159 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.15 EUR |
| 13+ | 1.36 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.7 EUR |
| 1000+ | 0.64 EUR |
| 2000+ | 0.59 EUR |