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IAUC45N04S6L063HATMA1

IAUC45N04S6L063HATMA1 Infineon Technologies


Infineon_IAUC45N04S6L063H_DataSheet_v01_00_EN-1921384.pdf Hersteller: Infineon Technologies
MOSFETs MOSFET_(20V 40V)
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Technische Details IAUC45N04S6L063HATMA1 Infineon Technologies

Description: MOSFET 2N-CH 40V 45A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 41W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 45A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 25V, Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22A, 10V, Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 9µA, Supplier Device Package: PG-TDSON-8-57, Grade: Automotive, Qualification: AEC-Q101.

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IAUC45N04S6L063HATMA1 Hersteller : Infineon Technologies infineon-iauc45n04s6l063h-datasheet-v01_00-en.pdf Automotive Power Mosfet
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IAUC45N04S6L063HATMA1 Hersteller : INFINEON TECHNOLOGIES Infineon-IAUC45N04S6L063H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb32017530913a295ff5 IAUC45N04S6L063H SMD N channel transistors
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IAUC45N04S6L063HATMA1 IAUC45N04S6L063HATMA1 Hersteller : Infineon Technologies Infineon-IAUC45N04S6L063H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb32017530913a295ff5 Description: MOSFET 2N-CH 40V 45A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 45A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 25V
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 9µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC45N04S6L063HATMA1 IAUC45N04S6L063HATMA1 Hersteller : Infineon Technologies Infineon-IAUC45N04S6L063H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb32017530913a295ff5 Description: MOSFET 2N-CH 40V 45A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 45A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 25V
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 9µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH