IAUC45N04S6L063HATMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 3.17 EUR |
| 10+ | 2.01 EUR |
| 100+ | 1.35 EUR |
| 500+ | 1.1 EUR |
| 1000+ | 0.98 EUR |
| 2500+ | 0.92 EUR |
| 5000+ | 0.87 EUR |
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Technische Details IAUC45N04S6L063HATMA1 Infineon Technologies
Description: MOSFET 2N-CH 40V 45A 8TDSON, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: PG-TDSON-8-57, Vgs(th) (Max) @ Id: 2V @ 9µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 45A (Tj), Drain to Source Voltage (Vdss): 40V, Power - Max: 41W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Half Bridge), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote IAUC45N04S6L063HATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IAUC45N04S6L063HATMA1 | Infineon Technologies |
 Description: MOSFET 2N-CH 40V 45A 8TDSONQualification: AEC-Q101 Grade: Automotive Supplier Device Package: PG-TDSON-8-57 Vgs(th) (Max) @ Id: 2V @ 9µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22A, 10V Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 25V Current - Continuous Drain (Id) @ 25°C: 45A (Tj) Drain to Source Voltage (Vdss): 40V Power - Max: 41W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IAUC45N04S6L063HATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 40V 45A 8TDSON Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: PG-TDSON-8-57 Vgs(th) (Max) @ Id: 2V @ 9µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22A, 10V Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 25V Current - Continuous Drain (Id) @ 25°C: 45A (Tj) Drain to Source Voltage (Vdss): 40V Power - Max: 41W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IAUC45N04S6L063HATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 15A; Idm: 134A; 41W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Power dissipation: 41W Case: PG-TDSON-8 Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Polarisation: unipolar On-state resistance: 8.5mΩ Drain current: 15A Drain-source voltage: 40V Pulsed drain current: 134A Gate-source voltage: ±16V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IAUC45N04S6L063HATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 45A 8TDSON
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-TDSON-8-57
Vgs(th) (Max) @ Id: 2V @ 9µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 45A (Tj)
Drain to Source Voltage (Vdss): 40V
Power - Max: 41W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 40V 45A 8TDSON
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-TDSON-8-57
Vgs(th) (Max) @ Id: 2V @ 9µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 45A (Tj)
Drain to Source Voltage (Vdss): 40V
Power - Max: 41W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IAUC45N04S6L063HATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 45A 8TDSON
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-TDSON-8-57
Vgs(th) (Max) @ Id: 2V @ 9µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 45A (Tj)
Drain to Source Voltage (Vdss): 40V
Power - Max: 41W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 40V 45A 8TDSON
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-TDSON-8-57
Vgs(th) (Max) @ Id: 2V @ 9µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 45A (Tj)
Drain to Source Voltage (Vdss): 40V
Power - Max: 41W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IAUC45N04S6L063HATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 15A; Idm: 134A; 41W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Power dissipation: 41W
Case: PG-TDSON-8
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 8.5mΩ
Drain current: 15A
Drain-source voltage: 40V
Pulsed drain current: 134A
Gate-source voltage: ±16V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 15A; Idm: 134A; 41W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Power dissipation: 41W
Case: PG-TDSON-8
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 8.5mΩ
Drain current: 15A
Drain-source voltage: 40V
Pulsed drain current: 134A
Gate-source voltage: ±16V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH