IAUC45N04S6N070HATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET 2N-CH 40V 45A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 45A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 701pF @ 25V
Rds On (Max) @ Id, Vgs: 7mOhm @ 22A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 9µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 0.86 EUR |
| 10000+ | 0.82 EUR |
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Technische Details IAUC45N04S6N070HATMA1 Infineon Technologies
Description: MOSFET 2N-CH 40V 45A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 41W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 45A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 701pF @ 25V, Rds On (Max) @ Id, Vgs: 7mOhm @ 22A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 9µA, Supplier Device Package: PG-TDSON-8-57, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote IAUC45N04S6N070HATMA1 nach Preis ab 0.88 EUR bis 2.22 EUR
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IAUC45N04S6N070HATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 40V 45A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 41W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 45A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 701pF @ 25V Rds On (Max) @ Id, Vgs: 7mOhm @ 22A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs(th) (Max) @ Id: 3V @ 9µA Supplier Device Package: PG-TDSON-8-57 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 20219 Stücke: Lieferzeit 10-14 Tag (e) |
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IAUC45N04S6N070HATMA1 | Hersteller : Infineon Technologies |
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Trans MOSFET N-CH 40V 55A Automotive T/R |
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| IAUC45N04S6N070HATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 14A; Idm: 119A; 41W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 14A Pulsed drain current: 119A Power dissipation: 41W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
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| IAUC45N04S6N070HATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 14A; Idm: 119A; 41W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 14A Pulsed drain current: 119A Power dissipation: 41W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |