Produkte > INFINEON TECHNOLOGIES > IAUC60N04S6L030HATMA1

IAUC60N04S6L030HATMA1 Infineon Technologies


Infineon-IAUC60N04S6L030H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175309120315fef
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 60A 8TDSON
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2128pF @ 25V
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 27677 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
264+1.73 EUR
Mindestbestellmenge: 264 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IAUC60N04S6L030HATMA1 Infineon Technologies

Description: MOSFET 2N-CH 40V 60A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 75W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 60A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 2128pF @ 25V, Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V, Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 25µA, Supplier Device Package: PG-TDSON-8-56, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.

Weitere Produktangebote IAUC60N04S6L030HATMA1 nach Preis ab 1.14 EUR bis 3.82 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IAUC60N04S6L030HATMA1 IAUC60N04S6L030HATMA1 Infineon Technologies Infineon_IAUC60N04S6L030H_DataSheet_v01_00_EN.pdf MOSFETs MOSFET_(20V 40V)
auf Bestellung 11763 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.63 EUR
10+2.11 EUR
100+1.54 EUR
500+1.27 EUR
1000+1.25 EUR
2500+1.23 EUR
5000+1.16 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IAUC60N04S6L030HATMA1 IAUC60N04S6L030HATMA1 Infineon Technologies Infineon-IAUC60N04S6L030H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175309120315fef Description: MOSFET 2N-CH 40V 60A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2128pF @ 25V
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 4922 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.82 EUR
10+2.45 EUR
100+1.67 EUR
500+1.34 EUR
1000+1.23 EUR
2000+1.14 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IAUC60N04S6L030HATMA1 Infineon_IAUC60N04S6L030H_DataSheet_v01_00_EN.pdf
Hersteller: Infineon Technologies
MOSFETs MOSFET_(20V 40V)
auf Bestellung 11763 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+3.63 EUR
10+2.11 EUR
100+1.54 EUR
500+1.27 EUR
1000+1.25 EUR
2500+1.23 EUR
5000+1.16 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IAUC60N04S6L030HATMA1 Infineon-IAUC60N04S6L030H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175309120315fef
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 60A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2128pF @ 25V
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 4922 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+3.82 EUR
10+2.45 EUR
100+1.67 EUR
500+1.34 EUR
1000+1.23 EUR
2000+1.14 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH