IAUC60N04S6L045HATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 60A 8TDSON
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: PG-TDSON-8-57
Vgs(th) (Max) @ Id: 2V @ 13µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1136pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Drain to Source Voltage (Vdss): 40V
Power - Max: 52W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
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Technische Details IAUC60N04S6L045HATMA1 Infineon Technologies
Description: MOSFET 2N-CH 40V 60A 8TDSON, Qualification: AEC-Q101, Grade: Automotive, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: PG-TDSON-8-57, Vgs(th) (Max) @ Id: 2V @ 13µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1136pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 60A (Tj), Drain to Source Voltage (Vdss): 40V, Power - Max: 52W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Half Bridge).
Weitere Produktangebote IAUC60N04S6L045HATMA1 nach Preis ab 0.95 EUR bis 2.97 EUR
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IAUC60N04S6L045HATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 40V 60A 8TDSON Qualification: AEC-Q101 Grade: Automotive Power - Max: 52W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Half Bridge) Part Status: Active Supplier Device Package: PG-TDSON-8-57 Vgs(th) (Max) @ Id: 2V @ 13µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1136pF @ 25V Current - Continuous Drain (Id) @ 25°C: 60A (Tj) Drain to Source Voltage (Vdss): 40V Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 9625 Stücke: Lieferzeit 10-14 Tag (e) |
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| IAUC60N04S6L045HATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 60A 8TDSON
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 52W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Part Status: Active
Supplier Device Package: PG-TDSON-8-57
Vgs(th) (Max) @ Id: 2V @ 13µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1136pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Drain to Source Voltage (Vdss): 40V
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 40V 60A 8TDSON
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 52W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Part Status: Active
Supplier Device Package: PG-TDSON-8-57
Vgs(th) (Max) @ Id: 2V @ 13µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1136pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Drain to Source Voltage (Vdss): 40V
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 9625 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 2.97 EUR |
| 10+ | 1.9 EUR |
| 100+ | 1.28 EUR |
| 500+ | 1.01 EUR |
| 1000+ | 0.95 EUR |