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IAUC60N04S6N044ATMA1

IAUC60N04S6N044ATMA1 Infineon Technologies

Infineon-IAUC60N04S6N044-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c8843d110a5
Hersteller: Infineon Technologies
Description: IAUC60N04S6N044ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.52mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 14µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.59 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IAUC60N04S6N044ATMA1 Infineon Technologies

Description: IAUC60N04S6N044ATMA1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 4.52mOhm @ 30A, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 3V @ 14µA, Supplier Device Package: PG-TDSON-8, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote IAUC60N04S6N044ATMA1 nach Preis ab 0.51 EUR bis 2.43 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IAUC60N04S6N044ATMA1 IAUC60N04S6N044ATMA1 Infineon Technologies Infineon_IAUC60N04S6N044_DataSheet_v01_00_EN.pdf MOSFETs MOSFET_(20V 40V)
auf Bestellung 419 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.27 EUR
10+1.41 EUR
100+0.93 EUR
500+0.73 EUR
1000+0.62 EUR
2500+0.6 EUR
5000+0.51 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IAUC60N04S6N044ATMA1 IAUC60N04S6N044ATMA1 Infineon Technologies Infineon-IAUC60N04S6N044-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c8843d110a5 Description: IAUC60N04S6N044ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.52mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 14µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 6942 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.43 EUR
12+1.53 EUR
100+1.01 EUR
500+0.79 EUR
1000+0.72 EUR
2000+0.66 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IAUC60N04S6N044ATMA1 Infineon_IAUC60N04S6N044_DataSheet_v01_00_EN.pdf
IAUC60N04S6N044ATMA1
Hersteller: Infineon Technologies
MOSFETs MOSFET_(20V 40V)
auf Bestellung 419 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+2.27 EUR
10+1.41 EUR
100+0.93 EUR
500+0.73 EUR
1000+0.62 EUR
2500+0.6 EUR
5000+0.51 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IAUC60N04S6N044ATMA1 Infineon-IAUC60N04S6N044-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c8843d110a5
IAUC60N04S6N044ATMA1
Hersteller: Infineon Technologies
Description: IAUC60N04S6N044ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.52mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 14µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 6942 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.43 EUR
12+1.53 EUR
100+1.01 EUR
500+0.79 EUR
1000+0.72 EUR
2000+0.66 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH