IAUC60N06S5L073ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET_)40V 60V) PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 30A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 19µA
Supplier Device Package: PG-TDSON-8-33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1655 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1064 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.36 EUR |
| 12+ | 1.49 EUR |
| 100+ | 0.99 EUR |
| 500+ | 0.78 EUR |
| 1000+ | 0.71 EUR |
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Technische Details IAUC60N06S5L073ATMA1 Infineon Technologies
Description: MOSFET_)40V 60V) PG-TDSON-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tj), Rds On (Max) @ Id, Vgs: 7.3mOhm @ 30A, 10V, Power Dissipation (Max): 52W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 19µA, Supplier Device Package: PG-TDSON-8-33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1655 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
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Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8 Type of transistor: N-MOSFET Case: PG-TDSON-8 Drain-source voltage: 60V Drain current: 15A On-state resistance: 9.8mΩ Power dissipation: 52W Polarisation: unipolar Kind of package: reel; tape Gate charge: 22.6nC Technology: OptiMOS™ 5 Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 168A Mounting: SMD Anzahl je Verpackung: 5000 Stücke |
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IAUC60N06S5L073ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET_)40V 60V) PG-TDSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tj) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 30A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 19µA Supplier Device Package: PG-TDSON-8-33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1655 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
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IAUC60N06S5L073ATMA1 | Hersteller : Infineon Technologies |
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| IAUC60N06S5L073ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8 Type of transistor: N-MOSFET Case: PG-TDSON-8 Drain-source voltage: 60V Drain current: 15A On-state resistance: 9.8mΩ Power dissipation: 52W Polarisation: unipolar Kind of package: reel; tape Gate charge: 22.6nC Technology: OptiMOS™ 5 Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 168A Mounting: SMD |
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