IAUC60N10S5L110ATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: PG-TDSON-8-33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 50 V
Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: PG-TDSON-8-33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 50 V
auf Bestellung 3694 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
9+ | 2.15 EUR |
11+ | 1.76 EUR |
100+ | 1.37 EUR |
500+ | 1.16 EUR |
1000+ | 0.94 EUR |
2000+ | 0.89 EUR |
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Technische Details IAUC60N10S5L110ATMA1 Infineon Technologies
Description: MOSFET_(75V 120V( PG-TDSON-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V, Power Dissipation (Max): 88W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 30µA, Supplier Device Package: PG-TDSON-8-33, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 50 V.
Weitere Produktangebote IAUC60N10S5L110ATMA1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IAUC60N10S5L110ATMA1 | Hersteller : Infineon Technologies | SP005422122 |
Produkt ist nicht verfügbar |
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IAUC60N10S5L110ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 240A; 88W Mounting: SMD Drain-source voltage: 100V Drain current: 42A On-state resistance: 15.3mΩ Type of transistor: N-MOSFET Power dissipation: 88W Polarisation: unipolar Kind of package: reel; tape Gate charge: 24.1nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 240A Case: PG-TDSON-8 Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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IAUC60N10S5L110ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET_(75V 120V( PG-TDSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 30µA Supplier Device Package: PG-TDSON-8-33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 50 V |
Produkt ist nicht verfügbar |
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IAUC60N10S5L110ATMA1 | Hersteller : Infineon Technologies | MOSFET MOSFET_(75V 120V( |
Produkt ist nicht verfügbar |
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IAUC60N10S5L110ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 240A; 88W Mounting: SMD Drain-source voltage: 100V Drain current: 42A On-state resistance: 15.3mΩ Type of transistor: N-MOSFET Power dissipation: 88W Polarisation: unipolar Kind of package: reel; tape Gate charge: 24.1nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 240A Case: PG-TDSON-8 |
Produkt ist nicht verfügbar |