IAUCN04S6N009TATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Tj)
Rds On (Max) @ Id, Vgs: 0.89mOhm @ 60A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 3V @ 90µA
Supplier Device Package: PG-LHDSO-10-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7345 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 137 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.2 EUR |
| 10+ | 2.32 EUR |
| 100+ | 1.82 EUR |
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Technische Details IAUCN04S6N009TATMA1 Infineon Technologies
Description: MOSFET_(20V 40V), Packaging: Tape & Reel (TR), Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 330A (Tj), Rds On (Max) @ Id, Vgs: 0.89mOhm @ 60A, 10V, Power Dissipation (Max): 178W (Tc), Vgs(th) (Max) @ Id: 3V @ 90µA, Supplier Device Package: PG-LHDSO-10-2, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7345 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote IAUCN04S6N009TATMA1 nach Preis ab 2.09 EUR bis 4.66 EUR
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IAUCN04S6N009TATMA1 | Hersteller : Infineon Technologies |
MOSFET MOSFET_(20V 40V) |
auf Bestellung 1697 Stücke: Lieferzeit 10-14 Tag (e) |
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IAUCN04S6N009TATMA1 | Hersteller : INFINEON |
Description: INFINEON - IAUCN04S6N009TATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 120 A, 890 µohm, LHDSO, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 178W Bauform - Transistor: LHDSO Anzahl der Pins: 10Pin(s) Produktpalette: OptiMOS 6 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 890µohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 1879 Stücke: Lieferzeit 14-21 Tag (e) |
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| IAUCN04S6N009TATMA1 | Hersteller : Infineon Technologies |
SP005562109 |
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IAUCN04S6N009TATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET_(20V 40V) Packaging: Tape & Reel (TR) Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 330A (Tj) Rds On (Max) @ Id, Vgs: 0.89mOhm @ 60A, 10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 3V @ 90µA Supplier Device Package: PG-LHDSO-10-2 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7345 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |