IAUCN04S6N009TATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Tj)
Rds On (Max) @ Id, Vgs: 0.89mOhm @ 60A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 3V @ 90µA
Supplier Device Package: PG-LHDSO-10-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7345 pF @ 25 V
Qualification: AEC-Q101
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Technische Details IAUCN04S6N009TATMA1 Infineon Technologies
Description: MOSFET_(20V 40V), Packaging: Tape & Reel (TR), Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 330A (Tj), Rds On (Max) @ Id, Vgs: 0.89mOhm @ 60A, 10V, Power Dissipation (Max): 178W (Tc), Vgs(th) (Max) @ Id: 3V @ 90µA, Supplier Device Package: PG-LHDSO-10-2, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7345 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote IAUCN04S6N009TATMA1 nach Preis ab 1.73 EUR bis 4.66 EUR
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IAUCN04S6N009TATMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V) Packaging: Cut Tape (CT) Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 330A (Tj) Rds On (Max) @ Id, Vgs: 0.89mOhm @ 60A, 10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 3V @ 90µA Supplier Device Package: PG-LHDSO-10-2 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7345 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2077 Stücke: Lieferzeit 10-14 Tag (e) |
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IAUCN04S6N009TATMA1 | Infineon Technologies |
MOSFET MOSFET_(20V 40V) |
auf Bestellung 1697 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IAUCN04S6N009TATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Tj)
Rds On (Max) @ Id, Vgs: 0.89mOhm @ 60A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 3V @ 90µA
Supplier Device Package: PG-LHDSO-10-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7345 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Tj)
Rds On (Max) @ Id, Vgs: 0.89mOhm @ 60A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 3V @ 90µA
Supplier Device Package: PG-LHDSO-10-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7345 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2077 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.58 EUR |
| 10+ | 2.98 EUR |
| 100+ | 2.06 EUR |
| 500+ | 1.73 EUR |
| IAUCN04S6N009TATMA1 |
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Hersteller: Infineon Technologies
MOSFET MOSFET_(20V 40V)
MOSFET MOSFET_(20V 40V)
auf Bestellung 1697 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.66 EUR |
| 10+ | 3.87 EUR |
| 100+ | 3.1 EUR |
| 250+ | 2.85 EUR |
| 500+ | 2.59 EUR |
| 1000+ | 2.22 EUR |
| 2000+ | 2.09 EUR |